Fabrication of Al-based superconducting high-aspect ratio TSVs for quantum 3D integration

Conference paper (2020)

Authors

J.A. Alfaro Barrantes EKL Processing -

Massimo Mastrangeli Electronic Components, Technology and Materials -

David Thoen Tera-Hertz Sensing -

J. Bueno Lopez Tera-Hertz Sensing -

J.J.A. Baselmans Tera-Hertz Sensing -

Pasqualina M Sarro Electronic Components, Technology and Materials -

Research Group

Electronic Components, Technology and Materials () (TU Delft)

DOI

https://doi.org/10.1109/MEMS46641.2020.9056165

Superconducting Quantum Through-silicon vias

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http://resolver.tudelft.nl/uuid:303a6fb1-7c10-4e48-abfe-6f363bf031b0

Published Date

01-01-2020

Language

English

Reuse Rights

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

We describe a microfabrication process that, thanks to a specifically tailored sidewall profile, enables for the first-time wafer-scale arrays of high-aspect ratio through-silicon vias (TSVs) coated with DC-sputtered Aluminum, achieving at once superconducting and CMOS-compatible 3D interconnects. Void-free conformal coating of up to 500μm-deep and 50μm-wide vias with a mere 2μm-thick layer of Al, a widely available metal in for IC manufacturing, was demonstrated. Single-via electric resistance as low as 468 mΩ at room temperature and superconductivity at 1.25 K were measured by a cross-bridge Kelvin resistor structure. This work establishes the fabrication of functional superconducting interposers suitable for 3D integration of high-density silicon-based quantum computing architectures.

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