System NEP Verification of a Wideband THz Direct Detector in CMOS

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Abstract

The predicted Noise Equivalent Power (NEP) of a THz direct detector is validated by means of a noise- and a system responsivity measurement. The direct detector consists of a double leaky slot lens antenna that operates from 200 GHz to 600 GHz in combination with a differential pair of Schottky Barrier Diodes (SBDs). The model is derived from low-frequency measurements.