Wideband Single Pixel Radiometer in CMOS

Conference paper (2017)

Authors

S.L. van Berkel Tera-Hertz Sensing - EEMCS
E.S. Malotaux Electronics - EEMCS
D. Cavallo Tera-Hertz Sensing - EEMCS
M. Spirito Electronics - EEMCS
A. Neto Tera-Hertz Sensing - EEMCS
Nuria Llombart Tera-Hertz Sensing - EEMCS
Research Group
Tera-Hertz Sensing (EEMCS) (TU Delft)
Copyright: © 2017 S.L. van Berkel, E.S. Malotaux, D. Cavallo, M. Spirito, A. Neto, Nuria Llombart
DOI
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https://doi.org/10.1109/IRMMW-THz.2017.8067166
Imaging Silicon CMOS technology Schottky diodes Radiometers CMOS integrated circuits Wideband antenna Lenses P-n junctions Submillimetre wave detectors Semiconductor diodes Submillimetre wave antennas Broadband antennas Detectors Antennas Radiometry Millimetre wave antennas Antenna-detector impedance mismatch Frequency 10.0 Hz Frequency 200.0 GHz to 600.0 GHz Passive uncooled radiometer pixel Pn-junction diode Size 28.0 nm Temperature 2.6 K Uncooled imaging capabilities Wideband single pixel radiometer
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Published Date

2017

Language

English

Reuse Rights

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Tera-Hertz Sensing

Abstract

The design and performance analysis are presented for a passive uncooled radiometer pixel suitable for integration in 28 nm CMOS technology. In the configuration a single wideband antenna, operating from 200 GHz to 600 GHz, is connected to a pn-junction diode. Including the antenna-detector impedance mismatch, the detector shows an average NEP of 2.71 pW/√Hz such that, together with the antenna, the radiometer promises fully passive and uncooled imaging capabilities with 2.6 K temperature sensitivity at a 10 Hz refresh rate. The design is planned for fabrication and measurement.