Wideband Single Pixel Radiometer in CMOS

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Wideband Single Pixel Radiometer in CMOS

Conference Paper (2017)

Author(s)

S.L. van Berkel (TU Delft - Tera-Hertz Sensing)

E.S. Malotaux (TU Delft - Electronics)

D. Cavallo (TU Delft - Tera-Hertz Sensing)

M. Spirito (TU Delft - Electronics)

A. Neto (TU Delft - Tera-Hertz Sensing)

N. Llombart (TU Delft - Tera-Hertz Sensing)

Research Group

Tera-Hertz Sensing

Imaging Silicon CMOS technology Schottky diodes Radiometers CMOS integrated circuits Wideband antenna Lenses P-n junctions Submillimetre wave detectors Semiconductor diodes Submillimetre wave antennas Broadband antennas Detectors Antennas Radiometry Millimetre wave antennas Antenna-detector impedance mismatch Frequency 10.0 Hz Frequency 200.0 GHz to 600.0 GHz Passive uncooled radiometer pixel Pn-junction diode Size 28.0 nm Temperature 2.6 K Uncooled imaging capabilities Wideband single pixel radiometer

DOI related publication

https://doi.org/10.1109/IRMMW-THz.2017.8067166 Final published version

To reference this document use

https://resolver.tudelft.nl/uuid:4851c61f-903b-42d5-a654-3d2c3918d1a5

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Publication Year

2017

Language

English

Research Group

Tera-Hertz Sensing

Pages (from-to)

1-2

ISBN (print)

978-1-5090-6048-1

ISBN (electronic)

978-1-5090-6050-4

Event

42nd International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz 2017 (2017-08-27 - 2017-09-01), Cancun, Quintana Roo, Mexico

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Abstract

The design and performance analysis are presented for a passive uncooled radiometer pixel suitable for integration in 28 nm CMOS technology. In the configuration a single wideband antenna, operating from 200 GHz to 600 GHz, is connected to a pn-junction diode. Including the antenna-detector impedance mismatch, the detector shows an average NEP of 2.71 pW/√Hz such that, together with the antenna, the radiometer promises fully passive and uncooled imaging capabilities with 2.6 K temperature sensitivity at a 10 Hz refresh rate. The design is planned for fabrication and measurement.

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