Comparison of Two and Three-Level AC-DC Rectifier Semiconductor Losses with SiC MOSFETs Considering Reverse Conduction
Guangyao Yu (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Thiago Batista Soeiro (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Jianning Dong (TU Delft - Electrical Engineering, Mathematics and Computer Science)
Pavol Bauer (TU Delft - Electrical Engineering, Mathematics and Computer Science)
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Abstract
This paper presents the semiconductor losses analytical equations in closed form for two-level voltage source converter, three-level neutral point clamped (NPC) and three-level T-Type PFC topologies in high power applications. The reverse parallel current conduction between the SiC MOSFETs channel and body diode is considered. A circuit simulation model is built in PLECS to estimate the semiconductor losses and to verify the accuracy of the developed analytical model. A calculation example of the semiconductor losses of a 200 kW three-phase rectifier is shown.