Automated tuning of inter-dot tunnel coupling in double quantum dots
Cornelis J. Van Diepen (TU Delft - QCD/Vandersypen Lab, Kavli institute of nanoscience Delft, TNO, TU Delft - QuTech Advanced Research Centre)
Pieter T. Eendebak (TU Delft - QuTech Advanced Research Centre, TNO)
B.T. Buijtendorp (TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft, TNO)
Uditendu Mukhopadhyay (TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Vandersypen Lab, Kavli institute of nanoscience Delft)
Takafumi Fujita (TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Vandersypen Lab, Kavli institute of nanoscience Delft)
C Reichl (ETH Zürich)
W Wegscheider (ETH Zürich)
L. M.K. Vandersypen (TU Delft - QN/Vandersypen Lab, TU Delft - QCD/Vandersypen Lab, Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre)
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Abstract
Semiconductor quantum dot arrays defined electrostatically in a 2D electron gas provide a scalable platform for quantum information processing and quantum simulations. For the operation of quantum dot arrays, appropriate voltages need to be applied to the gate electrodes that define the quantum dot potential landscape. Tuning the gate voltages has proven to be a time-consuming task, because of initial electrostatic disorder and capacitive cross-talk effects. Here, we report on the automated tuning of the inter-dot tunnel coupling in gate-defined semiconductor double quantum dots. The automation of the tuning of the inter-dot tunnel coupling is the next step forward in scalable and efficient control of larger quantum dot arrays. This work greatly reduces the effort of tuning semiconductor quantum dots for quantum information processing and quantum simulation.
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