H-band Quartz-Silicon Leaky-Wave Lens with Air-Bridge Interconnect to GaAs Front-End
Marta Arias Campo (TU Delft - Tera-Hertz Sensing, IMST GmbH)
Katarzyna Holc ( Fraunhofer Institute for Applied Solid State Physics (IAF))
Rainer Weber ( Fraunhofer Institute for Applied Solid State Physics (IAF))
C.D. De Martino (TU Delft - Electronics)
Marco Spirito (TU Delft - Electronics)
Arnulf Leuther ( Fraunhofer Institute for Applied Solid State Physics (IAF))
Simona Bruni (IMST GmbH)
N Llombart (TU Delft - Tera-Hertz Sensing)
More Info
expand_more
Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.
Abstract
Thanks to the large bandwidth availability, millimeter and sub-millimeter wave systems are getting more attractive to be used in a wide range of applications, such as high-resolution radar or high-speed communications. In this contribution, a new lens antenna in-package solution is presented for the H-band (220320 GHz), including a wideband quartz-cavity leaky-wave feed combined with an air-bridge chip interconnect technology, based on spray coating and laser lithography. This interconnection acts as a wideband, low-loss transition between the GaAs front-end and the quartz antenna, avoiding the use of expensive waveguide split-blocks. An antenna prototype including the interconnect has been manufactured and characterized, validating the full-wave simulated results for the integrated H-band leaky-wave with aperture efficiency higher than 74% over 34% bandwidth, and radiation efficiency higher than 70% over 37% of bandwidth.