Integrated silicon qubit platform with single-spin addressability, exchange control and single-shot singlet-triplet readout

Journal Article (2018)
Author(s)

M. A. Fogarty (University of New South Wales)

K. W. Chan (University of New South Wales)

B. Hensen (University of New South Wales)

W. Huang (University of New South Wales)

T. Tanttu (University of New South Wales)

C. H. Yang (University of New South Wales)

A. Laucht (University of New South Wales)

M. Veldhorst (TU Delft - QCD/Veldhorst Lab, Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre)

F. E. Hudson (University of New South Wales)

K. M. Itoh (Keio University)

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DOI related publication
https://doi.org/10.1038/s41467-018-06039-x Final published version
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Publication Year
2018
Language
English
Issue number
1
Volume number
9
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374
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Abstract

Silicon quantum dot spin qubits provide a promising platform for large-scale quantum computation because of their compatibility with conventional CMOS manufacturing and the long coherence times accessible using 28Si enriched material. A scalable error-corrected quantum processor, however, will require control of many qubits in parallel, while performing error detection across the constituent qubits. Spin resonance techniques are a convenient path to parallel two-axis control, while Pauli spin blockade can be used to realize local parity measurements for error detection. Despite this, silicon qubit implementations have so far focused on either single-spin resonance control, or control and measurement via voltage-pulse detuning in the two-spin singlet-triplet basis, but not both simultaneously. Here, we demonstrate an integrated device platform incorporating a silicon metal-oxide-semiconductor double quantum dot that is capable of single-spin addressing and control via electron spin resonance, combined with high-fidelity spin readout in the singlet-triplet basis.