Disorder in the heterogeneous material stack of semiconductor spin qubit systems introduces noise that compromises quantum information processing, posing a challenge to coherently control large-scale quantum devices. Here we exploit low-disorder epitaxial, strained quantum wells in Ge/SiGe heterostructures grown on Ge wafers to comprehensively probe the noise properties of complex micrometre-scale devices, comprising quantum dots arranged in a two-dimensional array. We demonstrate an average low charge noise across different locations on the wafer, providing a benchmark for quantum confined holes. We then establish spin qubit control and extend our investigation from electrical to magnetic noise through spin echo measurements. Exploiting dynamical decoupling sequences, we quantify the power spectral density components arising from the hyperfine interaction with ⁷³Ge spinful isotopes and identify coherence modulations associated with the interaction with the ²⁹Si nuclear spin bath near the Ge quantum well, underscoring the need for full isotopic purification of the qubit host environment.

Coupled spins in semiconductor quantum dots are a versatile platform for quantum computing and simulations of complex many-body phenomena. However, on the path of scale-up, crosstalk from densely packed electrodes poses a severe challenge. While crosstalk onto the quantum dot potentials is nowadays routinely compensated for, crosstalk on the exchange interaction is much more difficult to tackle because it is not always directly measurable. Here we propose and implement a way of characterizing and compensating crosstalk on adjacent exchange interactions by following the singlet-triplet avoided crossing in Ge. We show that we can easily identify the barrier-to-barrier crosstalk element without knowledge of the particular exchange value in a 2×4 quantum dot array. We uncover striking differences among these crosstalk elements that can be linked to the geometry of the device and the barrier gate fan-out. We validate the method by tuning up four-spin Heisenberg chains. The same method should be applicable to longer chains of spins and to other semiconductor platforms in which mixing of the singlet and the lowest-energy triplet is present or can be engineered. Additionally, this procedure is well-suited for automated tuning routines as we obtain a standout feature that can be easily tracked and directly returns the magnitude of the crosstalk.

Coupled spins in semiconductor quantum dots are a versatile platform for quantum computing and simulations of complex many-body phenomena. However, on the path of scale-up, crosstalk from densely packed electrodes poses a severe challenge. While crosstalk onto the quantum dot potentials is nowadays routinely compensated for, crosstalk on the exchange interaction is much more difficult to tackle because it is not always directly measurable. Here we propose and implement a way of characterizing and compensating crosstalk on adjacent exchange interactions by following the singlet-triplet avoided crossing in Ge. We show that we can easily identify the barrier-to-barrier crosstalk element without knowledge of the particular exchange value in a 2×4 quantum dot array. We uncover striking differences among these crosstalk elements that can be linked to the geometry of the device and the barrier gate fan-out. We validate the method by tuning up four-spin Heisenberg chains. The same method should be applicable to longer chains of spins and to other semiconductor platforms in which mixing of the singlet and the lowest-energy triplet is present or can be engineered. Additionally, this procedure is well-suited for automated tuning routines as we obtain a standout feature that can be easily tracked and directly returns the magnitude of the crosstalk.

Semiconductor spin qubits have emerged as a promising platform for quantum computing, following a significant improvement in their control fidelities over recent years. Increasing the qubit count remains challenging, beginning with the fabrication of small features and complex fan-outs. A particular challenge has been formed by the need for individual barrier gates to control the exchange interaction between adjacent spin qubits. Here, we propose a method to vary two-qubit interactions without applying pulses on individual barrier gates while also remaining insensitive to detuning noise in first order. Experimentally we find that changing plunger gate voltages over 300 mV can tune the exchange energy J from 100 kHz to 60 MHz. This allows us to perform two-qubit operations without changing the barrier gate voltage. Based on these findings we conceptualize a spin qubit architecture without individual barrier gates, simplifying the fabrication while maintaining the control necessary for universal quantum computation.

As one of the few group IV materials with the potential to host superconductor–semiconductor hybrid devices, planar germanium hosting proximitized quantum dots is a compelling platform to achieve and combine topological superconductivity with existing and new qubit modalities. We demonstrate a quantum dot in a Ge/SiGe heterostructure proximitized by a platinum germanosilicide (PtSiGe) superconducting lead, forming a superconducting lead–quantum dot–superconducting lead junction. We show tunability of the coupling strength between the quantum dot and the superconducting lead, and gate control of the ratio of charging energy and the induced gap, and we tune the ground state of the system between even and odd parity. Furthermore, we characterize critical magnetic field strengths, finding a critical out-of-plane field of 0.90 ± 0.04 T. Finally, we explore sub-gap spin splitting, observing rich physics in the resulting spectra, that we model using a zero-bandwidth model in the Yu–Shiba–Rusinov limit. Our findings open up the physics of alternative spin and superconducting qubits, and the physics of Josephson junction arrays, in germanium.

Semiconductor spin qubits have emerged as a promising platform for quantum computing, following a significant improvement in their control fidelities over recent years. Increasing the qubit count remains challenging, beginning with the fabrication of small features and complex fan-outs. A particular challenge has been formed by the need for individual barrier gates to control the exchange interaction between adjacent spin qubits. Here, we propose a method to vary two-qubit interactions without applying pulses on individual barrier gates while also remaining insensitive to detuning noise in first order. Experimentally we find that changing plunger gate voltages over 300 mV can tune the exchange energy J from 100 kHz to 60 MHz. This allows us to perform two-qubit operations without changing the barrier gate voltage. Based on these findings we conceptualize a spin qubit architecture without individual barrier gates, simplifying the fabrication while maintaining the control necessary for universal quantum computation.

Disorder in the heterogeneous material stack of semiconductor spin qubit systems introduces noise that compromises quantum information processing, posing a challenge to coherently control large-scale quantum devices. Here we exploit low-disorder epitaxial, strained quantum wells in Ge/SiGe heterostructures grown on Ge wafers to comprehensively probe the noise properties of complex micrometre-scale devices, comprising quantum dots arranged in a two-dimensional array. We demonstrate an average low charge noise across different locations on the wafer, providing a benchmark for quantum confined holes. We then establish spin qubit control and extend our investigation from electrical to magnetic noise through spin echo measurements. Exploiting dynamical decoupling sequences, we quantify the power spectral density components arising from the hyperfine interaction with ⁷³Ge spinful isotopes and identify coherence modulations associated with the interaction with the ²⁹Si nuclear spin bath near the Ge quantum well, underscoring the need for full isotopic purification of the qubit host environment.

Arrays of gate-defined semiconductor quantum dots are among the leading candidates for building scalable quantum processors. High-fidelity initialization, control, and readout of spin qubit registers require exquisite and targeted control over key Hamiltonian parameters that define the electrostatic environment. However, due to the tight gate pitch, capacitive crosstalk between gates hinders independent tuning of chemical potentials and interdot couplings. While virtual gates offer a practical solution, determining all the required cross-capacitance matrices accurately and efficiently in large quantum dot registers is an open challenge. Here, we establish a modular automated virtualization system (MAViS)-a general and modular framework for autonomously constructing a complete stack of multilayer virtual gates in real time. Our method employs machine learning techniques to rapidly extract features from two-dimensional charge stability diagrams. We then utilize computer vision and regression models to self-consistently determine all relative capacitive couplings necessary for virtualizing plunger and barrier gates in both low-and high-Tunnel-coupling regimes. Using MAViS, we successfully demonstrate accurate virtualization of a dense two-dimensional array comprising ten quantum dots defined in a high-quality Ge/SiGe heterostructure. Our work offers an elegant and practical solution for the efficient control of large-scale semiconductor quantum dot systems.

Micromagnet-enabled electric-dipole spin resonance (EDSR) is an established method for high-fidelity single-spin control in silicon, although so far experiments have been restricted to one-dimensional arrays. In contrast, qubit control based on hopping spins has recently emerged as a compelling alternative, with high-fidelity baseband control realized in sparse two-dimensional hole arrays in germanium. In this work, we commission a ²⁸Si/SiGe 2 × 2 quantum dot array both as a four-qubit device using EDSR and as a two-qubit device using baseband hopping control. We establish a lower bound on the fidelity of the hopping gate of 99.50(6)%, which is similar to the average fidelity of the resonant gate. The hopping gate also circumvents the transient pulse-induced resonance shift from heating observed during EDSR operation. To motivate hopping spins as an attractive means of scaling silicon spin-qubit arrays, we propose an extensible nanomagnet design that enables engineered baseband control of large spin arrays.

Micromagnet-enabled electric-dipole spin resonance (EDSR) is an established method for high-fidelity single-spin control in silicon, although so far experiments have been restricted to one-dimensional arrays. In contrast, qubit control based on hopping spins has recently emerged as a compelling alternative, with high-fidelity baseband control realized in sparse two-dimensional hole arrays in germanium. In this work, we commission a ²⁸Si/SiGe 2 × 2 quantum dot array both as a four-qubit device using EDSR and as a two-qubit device using baseband hopping control. We establish a lower bound on the fidelity of the hopping gate of 99.50(6)%, which is similar to the average fidelity of the resonant gate. The hopping gate also circumvents the transient pulse-induced resonance shift from heating observed during EDSR operation. To motivate hopping spins as an attractive means of scaling silicon spin-qubit arrays, we propose an extensible nanomagnet design that enables engineered baseband control of large spin arrays.

The rapidly growing number of qubits in semiconductor quantum computers requires a scalable control interface, including the efficient generation of dc bias voltages for gate electrodes. To avoid unrealistically complex wiring between any room-temperature electronics and the cryogenic qubits, this article presents an integrated cryogenic solution for the bias-voltage generation and distribution for large-scale semiconductor spin-qubit quantum processors. A dedicated cryogenic CMOS (cryo-CMOS) demultiplexer and a cryo-CMOS dc digital-to-analog converter (DAC) have been developed in a 22-nm fin field-effect transistor process to control a codeveloped 2-D array designed with 648 single-hole transistors. Thanks to the dissipation below 120 µ W, the whole system operates at temperatures below 70 mK in a custom-built electrical/mechanical infrastructure embedded in a standard single-pulse-tube dilution refrigerator. The bias voltages generated by the cryo-CMOS DAC are demultiplexed to sample-and-hold structures, allowing to store 96 unique bias voltages over a 3 V range with a voltage drift between 60 µ V / s and 18 mV/s. This work demonstrates a tight integration at mK temperatures of cryo-CMOS bias generation and distribution with a dedicated large-scale quantum device. This showcases how this approach simplifies the wiring to the electronics, thus facilitating the scaling up of quantum processors toward the large number of qubits required for a practical quantum computer.

Spin qubits in germanium gate-defined quantum dots have made considerable progress within the last few years, partially due to their strong spin-orbit coupling and site-dependent g-tensors. While this characteristic of the g-factors removes the need for micromagnets and allows for the possibility of all-electric qubit control, relying on these g-tensors necessitates the need to understand their sensitivity to the confinement potential that defines the quantum dots. Here, we demonstrate a S − T_ qubit whose frequency is a strong function of the voltage applied to the barrier gate shared by the quantum dots. We find a g-factor that can be approximately increased by an order of magnitude adjusting the barrier gate voltage only by 12 mV. We show how this strong dependence could potentially be attributed to the dots moving through a variable strain environment in our device. This work not only reinforces previous findings that site-dependent g-tensors in germanium can be utilized for qubit manipulation, but reveals the sensitivity and tunability these g-tensors have to the electrostatic confinement of the quantum dot.

Spin qubits in germanium gate-defined quantum dots have made considerable progress within the last few years, partially due to their strong spin-orbit coupling and site-dependent g-tensors. While this characteristic of the g-factors removes the need for micromagnets and allows for the possibility of all-electric qubit control, relying on these g-tensors necessitates the need to understand their sensitivity to the confinement potential that defines the quantum dots. Here, we demonstrate a S − T_ qubit whose frequency is a strong function of the voltage applied to the barrier gate shared by the quantum dots. We find a g-factor that can be approximately increased by an order of magnitude adjusting the barrier gate voltage only by 12 mV. We show how this strong dependence could potentially be attributed to the dots moving through a variable strain environment in our device. This work not only reinforces previous findings that site-dependent g-tensors in germanium can be utilized for qubit manipulation, but reveals the sensitivity and tunability these g-tensors have to the electrostatic confinement of the quantum dot.

Arrays of gate-defined semiconductor quantum dots are among the leading candidates for building scalable quantum processors. High-fidelity initialization, control, and readout of spin qubit registers require exquisite and targeted control over key Hamiltonian parameters that define the electrostatic environment. However, due to the tight gate pitch, capacitive crosstalk between gates hinders independent tuning of chemical potentials and interdot couplings. While virtual gates offer a practical solution, determining all the required cross-capacitance matrices accurately and efficiently in large quantum dot registers is an open challenge. Here, we establish a modular automated virtualization system (MAViS)-a general and modular framework for autonomously constructing a complete stack of multilayer virtual gates in real time. Our method employs machine learning techniques to rapidly extract features from two-dimensional charge stability diagrams. We then utilize computer vision and regression models to self-consistently determine all relative capacitive couplings necessary for virtualizing plunger and barrier gates in both low-and high-Tunnel-coupling regimes. Using MAViS, we successfully demonstrate accurate virtualization of a dense two-dimensional array comprising ten quantum dots defined in a high-quality Ge/SiGe heterostructure. Our work offers an elegant and practical solution for the efficient control of large-scale semiconductor quantum dot systems.

Quantum computers require the systematic operation of qubits with high fidelity. For holes in germanium, the spin-orbit interaction allows for electric, fast and high-fidelity qubit gates. However, the strong g-tensor anisotropy of holes in germanium and their sensitivity to the operational and environmental conditions challenge the operation of large qubit arrays. Here, we investigate a two-dimensional 10-spin qubit array with single-qubit gate fidelities above 99%, and obtain surprisingly uniform qubit properties. By tuning the hole occupation, we demonstrate control over the spin susceptibility, enabling fast plunger gate driving with Rabi frequencies consistently above 1.45 MHz/ (mV ⋅ T). Moreover, we probe the locality of electric dipole spin resonance and find that the configuration with three-hole occupancy driven by the associated quantum dot plunger gate reduces crosstalk, lowering it by an average factor of 2.5 to nearest neighbours, compared to single-hole plunger driving. Theoretical modelling points towards the pronounced anisotropy of p-like orbitals as the main mechanism with significant contributions through Coulomb interactions, giving directions for reproducible control of large qubit arrays.

Quantum computers require the systematic operation of qubits with high fidelity. For holes in germanium, the spin-orbit interaction allows for electric, fast and high-fidelity qubit gates. However, the strong g-tensor anisotropy of holes in germanium and their sensitivity to the operational and environmental conditions challenge the operation of large qubit arrays. Here, we investigate a two-dimensional 10-spin qubit array with single-qubit gate fidelities above 99%, and obtain surprisingly uniform qubit properties. By tuning the hole occupation, we demonstrate control over the spin susceptibility, enabling fast plunger gate driving with Rabi frequencies consistently above 1.45 MHz/ (mV ⋅ T). Moreover, we probe the locality of electric dipole spin resonance and find that the configuration with three-hole occupancy driven by the associated quantum dot plunger gate reduces crosstalk, lowering it by an average factor of 2.5 to nearest neighbours, compared to single-hole plunger driving. Theoretical modelling points towards the pronounced anisotropy of p-like orbitals as the main mechanism with significant contributions through Coulomb interactions, giving directions for reproducible control of large qubit arrays.

As one of the few group IV materials with the potential to host superconductor–semiconductor hybrid devices, planar germanium hosting proximitized quantum dots is a compelling platform to achieve and combine topological superconductivity with existing and new qubit modalities. We demonstrate a quantum dot in a Ge/SiGe heterostructure proximitized by a platinum germanosilicide (PtSiGe) superconducting lead, forming a superconducting lead–quantum dot–superconducting lead junction. We show tunability of the coupling strength between the quantum dot and the superconducting lead, and gate control of the ratio of charging energy and the induced gap, and we tune the ground state of the system between even and odd parity. Furthermore, we characterize critical magnetic field strengths, finding a critical out-of-plane field of 0.90 ± 0.04 T. Finally, we explore sub-gap spin splitting, observing rich physics in the resulting spectra, that we model using a zero-bandwidth model in the Yu–Shiba–Rusinov limit. Our findings open up the physics of alternative spin and superconducting qubits, and the physics of Josephson junction arrays, in germanium.

The rapidly growing number of qubits in semiconductor quantum computers requires a scalable control interface, including the efficient generation of dc bias voltages for gate electrodes. To avoid unrealistically complex wiring between any room-temperature electronics and the cryogenic qubits, this article presents an integrated cryogenic solution for the bias-voltage generation and distribution for large-scale semiconductor spin-qubit quantum processors. A dedicated cryogenic CMOS (cryo-CMOS) demultiplexer and a cryo-CMOS dc digital-to-analog converter (DAC) have been developed in a 22-nm fin field-effect transistor process to control a codeveloped 2-D array designed with 648 single-hole transistors. Thanks to the dissipation below 120 µ W, the whole system operates at temperatures below 70 mK in a custom-built electrical/mechanical infrastructure embedded in a standard single-pulse-tube dilution refrigerator. The bias voltages generated by the cryo-CMOS DAC are demultiplexed to sample-and-hold structures, allowing to store 96 unique bias voltages over a 3 V range with a voltage drift between 60 µ V / s and 18 mV/s. This work demonstrates a tight integration at mK temperatures of cryo-CMOS bias generation and distribution with a dedicated large-scale quantum device. This showcases how this approach simplifies the wiring to the electronics, thus facilitating the scaling up of quantum processors toward the large number of qubits required for a practical quantum computer.

Qubits that can be efficiently controlled are essential for the development of scalable quantum hardware. Although resonant control is used to execute high-fidelity quantum gates, the scalability is challenged by the integration of high-frequency oscillating signals, qubit cross-talk, and heating. Here, we show that by engineering the hopping of spins between quantum dots with a site-dependent spin quantization axis, quantum control can be established with discrete signals. We demonstrate hopping-based quantum logic and obtain single-qubit gate fidelities of 99.97%, coherent shuttling fidelities of 99.992% per hop, and a two-qubit gate fidelity of 99.3%, corresponding to error rates that have been predicted to allow for quantum error correction. We also show that hopping spins constitute a tuning method by statistically mapping the coherence of a 10-quantum dot system. Our results show that dense quantum dot arrays with sparse occupation could be developed for efficient and high-connectivity qubit registers.

The electrical characterisation of classical and quantum devices is a critical step in the development cycle of heterogeneous material stacks for semiconductor spin qubits. In the case of silicon, properties such as disorder and energy separation of conduction band valleys are commonly investigated individually upon modifications in selected parameters of the material stack. However, this reductionist approach fails to consider the interdependence between different structural and electronic properties at the danger of optimising one metric at the expense of the others. Here, we achieve a significant improvement in both disorder and valley splitting by taking a co-design approach to the material stack. We demonstrate isotopically purified, strained quantum wells with high mobility of 3.14(8) × 10⁵ cm² V⁻¹ s⁻¹ and low percolation density of 6.9(1) × 10¹⁰ cm⁻². These low disorder quantum wells support quantum dots with low charge noise of 0.9(3) μeV Hz^−1/2 and large mean valley splitting energy of 0.24(7) meV, measured in qubit devices. By striking the delicate balance between disorder, charge noise, and valley splitting, these findings provide a benchmark for silicon as a host semiconductor for quantum dot qubits. We foresee the application of these heterostructures in larger, high-performance quantum processors.