Strained germanium ((Formula presented.) -Ge) and strained silicon ((Formula presented.) -Si) buried quantum wells have enabled advanced spin-qubit quantum processors. However, in the absence of suitable lattice-matched substrates, (Formula presented.) -Ge and (Formula presented.) -Si are deposited on defective, metamorphic SiGe buffers, which may impact device performance and scaling. Here an alternative platform is introduced based on the heterojunction between bulk unstrained Ge and a lattice-matched strained silicon-germanium ((Formula presented.) -SiGe) barrier, eliminating the need for metamorphic buffers altogether. In a structure with a 52-nm-thick (Formula presented.) -SiGe barrier, a low-disorder two-dimensional hole gas is demonstrated with a high-mobility of (Formula presented.) and a low percolation density of (Formula presented.). Quantum transport shows that holes confined in the buried unstrained Ge channel have a strong density-dependent in-plane effective mass and out-of-plane (Formula presented.) -factor, pointing to a significant heavy-hole–light-hole mixing in agreement with theory. Measurements of Zeeman-split levels in quantum point contacts further highlight this character, showing a two-fold larger in-plane (Formula presented.) -factor in Ge than in (Formula presented.) -Ge. The prospects of strong spin–orbit interaction, isotopic purification, and of hosting superconducting pairing correlations make this platform appealing for fast quantum hardware and hybrid quantum systems.

Evaluation of the quantum lifetime in two-dimensional hole systems, together with band-structure parameters such as the effective mass and g factor, becomes challenging when competing energy scales shape Shubnnikov–de Haas oscillations in a magnetic field. Here, we overcome this challenge for holes with pseudospin J_z = ± ₂ ³, confined in low-disorder strained germanium quantum wells. We extract self-consistently the effective mass, g factor, and quantum lifetime, and estimate a maximum quantum mobility of 133(3) × 10³ cm²/V s, setting a benchmark for holes in group IV semiconductors. The high quality of the hole gas if further highlighted by observing clean fractional quantum Hall states at low magnetic field and density.

The large-scale integration of semiconductor spin qubits into quantum processors will require the characterization of quantum components at scale. However, such characterization is challenging and typically requires radio-frequency measurements at millikelvin temperatures and the presence of magnetic fields. Here we report a scalable architecture for characterizing spin qubits using a quantum dot crossbar array. The approach, which we term as the qubit-array research platform for engineering and testing, uses a crossbar array comprising tightly pitched spin-qubit tiles and is implemented in planar germanium, with the potential to host 1,058 single-hole spin qubits. We measure a subset of 40 tiles and demonstrate key device functionality at millikelvin temperatures, including tile addressability, threshold voltage and charge noise statistics, as well as the characterization of hole spin qubits and their coherence times in a single tile.

Understanding scattering mechanisms in semiconductor heterostructures is crucial to reducing sources of disorder and ensuring high yield and uniformity in large spin qubit arrays. Disorder of the parent two-dimensional electron or hole gas is commonly estimated by the critical, percolation-driven density associated with the metal–insulator transition. However, a reliable estimation of the critical density within percolation theory is hindered by the need to measure conductivity with high precision at low carrier densities, where experiments are most difficult. Here, we connect experimentally percolation density and quantum Hall plateau width, in line with an earlier heuristic intuition, and offer an alternative method for characterizing semiconductor heterostructure disorder.

Disorder in the heterogeneous material stack of semiconductor spin qubit systems introduces noise that compromises quantum information processing, posing a challenge to coherently control large-scale quantum devices. Here we exploit low-disorder epitaxial, strained quantum wells in Ge/SiGe heterostructures grown on Ge wafers to comprehensively probe the noise properties of complex micrometre-scale devices, comprising quantum dots arranged in a two-dimensional array. We demonstrate an average low charge noise across different locations on the wafer, providing a benchmark for quantum confined holes. We then establish spin qubit control and extend our investigation from electrical to magnetic noise through spin echo measurements. Exploiting dynamical decoupling sequences, we quantify the power spectral density components arising from the hyperfine interaction with ⁷³Ge spinful isotopes and identify coherence modulations associated with the interaction with the ²⁹Si nuclear spin bath near the Ge quantum well, underscoring the need for full isotopic purification of the qubit host environment.

We grow strained Ge/SiGe heterostructures by reduced-pressure chemical vapor deposition on 100 mm Ge wafers. The use of Ge wafers as substrates for epitaxy enables high-quality Ge-rich SiGe strain-relaxed buffers with a threading dislocation density of ( 6 ± 1 ) × 10 5 cm − 2 , nearly an order of magnitude improvement compared to control strain-relaxed buffers on Si wafers. The associated reduction in short-range scattering allows for a drastic improvement of the disorder properties of the two-dimensional hole gas, measured in several Ge/SiGe heterostructure field-effect transistors. We measure an average low percolation density of ( 1.22 ± 0.03 ) × 10 10 cm − 2 and an average maximum mobility of ( 3.4 ± 0.1 ) × 10 6 cm 2 / Vs and quantum mobility of ( 8.4 ± 0.5 ) × 10 4 cm 2 / Vs when the hole density in the quantum well is saturated to ( 1.65 ± 0.02 ) × 10 11 cm − 2 . We anticipate immediate application of these heterostructures for next-generation, higher-performance Ge spin-qubits, and their integration into larger quantum processors.

The new quantum era is expected to have an unprecedented social impact, enabling the research of tomorrow in several pivotal fields. These perspectives require a physical system able to encode, process and store for a sufficiently long amount of time the quantum information. However, the optimal engineering of currently available quantum computers, which are small and flawed by several non-ideal phenomena, requires an efficacious methodology for exploring the design space. Hence, there is an unmet need for the development of reliable hardware-aware simulation infrastructures able to efficiently emulate the behaviour of quantum hardware that commits to looking for innovative systematic ways, with a bottom-up approach starting from the physical level, moving to the device level and up to the system level. This article discusses the development of a classical simulation infrastructure for semiconductor quantum-dot quantum computation based on compact models, where each device is described in terms of the main physical parameters affecting its performance in a sufficiently easy way from a computational point of view for providing accurate results without involving sophisticated physical simulators, thus reducing the requirements on CPU and memory. The effectiveness of the involved approximations is tested on a benchmark of quantum circuits - in the expected operating ranges of quantum hardware - by comparing the corresponding outcomes with those obtained via numeric integration of the Schrödinger equation. The achieved results give evidence that this work is a step forward towards the definition of a classical simulator of quantum computers.