Using Landau quantization to probe disorder in semiconductor heterostructures
Asser Elsayed (TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft, TU Delft - QCD/Scappucci Lab)
Davide Costa (Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Scappucci Lab)
Lucas E.A. Stehouwer (TU Delft - BUS/Quantum Delft, TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft)
Alberto Tosato (Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Scappucci Lab)
Mario Lodari (Kavli institute of nanoscience Delft, TU Delft - QCD/Scappucci Lab, TU Delft - QuTech Advanced Research Centre)
Brian Paquelet Wuetz (TU Delft - BUS/Quantum Delft, Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre)
Davide Degli Esposti (TU Delft - QCD/Vandersypen Lab, TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft)
Giordano Scappucci (TU Delft - Quantum Circuit Architectures and Technology, Kavli institute of nanoscience Delft, TU Delft - QCD/Scappucci Lab, TU Delft - QuTech Advanced Research Centre)
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Abstract
Understanding scattering mechanisms in semiconductor heterostructures is crucial to reducing sources of disorder and ensuring high yield and uniformity in large spin qubit arrays. Disorder of the parent two-dimensional electron or hole gas is commonly estimated by the critical, percolation-driven density associated with the metal–insulator transition. However, a reliable estimation of the critical density within percolation theory is hindered by the need to measure conductivity with high precision at low carrier densities, where experiments are most difficult. Here, we connect experimentally percolation density and quantum Hall plateau width, in line with an earlier heuristic intuition, and offer an alternative method for characterizing semiconductor heterostructure disorder.
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