Disorder in the heterogeneous material stack of semiconductor spin qubit systems introduces noise that compromises quantum information processing, posing a challenge to coherently control large-scale quantum devices. Here we exploit low-disorder epitaxial, strained quantum wells in Ge/SiGe heterostructures grown on Ge wafers to comprehensively probe the noise properties of complex micrometre-scale devices, comprising quantum dots arranged in a two-dimensional array. We demonstrate an average low charge noise across different locations on the wafer, providing a benchmark for quantum confined holes. We then establish spin qubit control and extend our investigation from electrical to magnetic noise through spin echo measurements. Exploiting dynamical decoupling sequences, we quantify the power spectral density components arising from the hyperfine interaction with ⁷³Ge spinful isotopes and identify coherence modulations associated with the interaction with the ²⁹Si nuclear spin bath near the Ge quantum well, underscoring the need for full isotopic purification of the qubit host environment.

Quantum computers require the systematic operation of qubits with high fidelity. For holes in germanium, the spin-orbit interaction allows for electric, fast and high-fidelity qubit gates. However, the strong g-tensor anisotropy of holes in germanium and their sensitivity to the operational and environmental conditions challenge the operation of large qubit arrays. Here, we investigate a two-dimensional 10-spin qubit array with single-qubit gate fidelities above 99%, and obtain surprisingly uniform qubit properties. By tuning the hole occupation, we demonstrate control over the spin susceptibility, enabling fast plunger gate driving with Rabi frequencies consistently above 1.45 MHz/ (mV ⋅ T). Moreover, we probe the locality of electric dipole spin resonance and find that the configuration with three-hole occupancy driven by the associated quantum dot plunger gate reduces crosstalk, lowering it by an average factor of 2.5 to nearest neighbours, compared to single-hole plunger driving. Theoretical modelling points towards the pronounced anisotropy of p-like orbitals as the main mechanism with significant contributions through Coulomb interactions, giving directions for reproducible control of large qubit arrays.

All-electrical baseband control of qubits facilitates scaling up quantum processors by removing issues of crosstalk and heat generation. In semiconductor quantum dots, this is enabled by multispin qubit encodings, such as the exchange-only qubit. However, their performance is limited by unavoidable leakage states that are energetically close to the computational subspace. In this Letter, we introduce an alternative, scalable spin qubit architecture that leverages strong spin-orbit interactions of hole nanostructures for baseband qubit operations while completely eliminating leakage channels and reducing the overall gate overhead. This encoding is intrinsically robust to local variability in hole spin properties and operates with two degenerate states, removing the need for precise calibration and mitigating heat generation from fast signal sources. Finally, our architecture is fully compatible with current technology, utilizing the same initialization, readout, and multiqubit protocols of state-of-The-Art spin-1/2 systems. By addressing critical scalability challenges, our design offers a robust and scalable pathway for semiconductor spin qubit technologies.