KH

K.L. Hudson

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A Lattice-Matched Platform for Quantum Technology

Strained germanium (๐œ€-Ge) and strained silicon (๐œ€-Si) buried quantum wells have enabled advanced spin-qubit quantum processors. However, in the absence of suitable lattice-matched substrates, ๐œ€-Ge and ๐œ€-Si are deposited on defective, metamorphic SiGe buffers, which may impact device performance and scaling. Here an alternative platform is introduced based on the heterojunction between bulk unstrained Ge and a lattice-matched strained silicon-germanium (๐œ€-SiGe) barrier, eliminating the need for metamorphic buffers altogether. In a structure with a 52-nm-thick ๐œ€-SiGe barrier, a low-disorder two-dimensional hole gas is demonstrated with a high-mobility of 1.33 ร—105 cm2/Vs and a low percolation density of 1.4โข(1) ร—1010 cmโˆ’2. Quantum transport shows that holes confined in the buried unstrained Ge channel have a strong density-dependent in-plane effective mass and out-of-plane ๐‘”-factor, pointing to a significant heavy-holeโ€“light-hole mixing in agreement with theory. Measurements of Zeeman-split levels in quantum point contacts further highlight this character, showing a two-fold larger in-plane ๐‘”-factor in Ge than in ๐œ€-Ge. The prospects of strong spinโ€“orbit interaction, isotopic purification, and of hosting superconducting pairing correlations make this platform appealing for fast quantum hardware and hybrid quantum systems. ...
Constricting transport through a one-dimensional quantum point contact in the quantum Hall regime enables gate-tunable selection of the edge modes propagating between voltage probe electrodes. Here, we investigate the quantum Hall effect in a quantum point contact fabricated on low disorder strained germanium quantum wells. For increasing magnetic field, we observe Zeeman spin-split 1D ballistic hole transport evolving to integer quantum Hall states, with well-defined quantized conductance increasing in multiples of e 2 / h down to the first integer filling factor ฮฝ = 1. These results establish strained germanium as a viable platform for complex experiments probing many-body states and quantum phase transitions. ...
The large-scale integration of semiconductor spin qubits into quantum processors will require the characterization of quantum components at scale. However, such characterization is challenging and typically requires radio-frequency measurements at millikelvin temperatures and the presence of magnetic fields. Here we report a scalable architecture for characterizing spin qubits using a quantum dot crossbar array. The approach, which we term as the qubit-array research platform for engineering and testing, uses a crossbar array comprising tightly pitched spin-qubit tiles and is implemented in planar germanium, with the potential to host 1,058 single-hole spin qubits. We measure a subset of 40 tiles and demonstrate key device functionality at millikelvin temperatures, including tile addressability, threshold voltage and charge noise statistics, as well as the characterization of hole spin qubits and their coherence times in a single tile. ...