Conductance plateaus at quantum Hall integer filling factors in germanium quantum point contacts
K.L. Hudson (TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Scappucci Lab, Kavli institute of nanoscience Delft)
D. Guzzo da Costa (TU Delft - Industrial Design Engineering, TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft)
D. Degli Esposti (Kavli institute of nanoscience Delft, TU Delft - QCD/Vandersypen Lab, TU Delft - QuTech Advanced Research Centre)
L.E.A. Stehouwer (TU Delft - QuTech Advanced Research Centre, TU Delft - BUS/Quantum Delft, Kavli institute of nanoscience Delft)
G. Scappucci (TU Delft - Electrical Engineering, Mathematics and Computer Science, TU Delft - QCD/Scappucci Lab, Kavli institute of nanoscience Delft)
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Abstract
Constricting transport through a one-dimensional quantum point contact in the quantum Hall regime enables gate-tunable selection of the edge modes propagating between voltage probe electrodes. Here, we investigate the quantum Hall effect in a quantum point contact fabricated on low disorder strained germanium quantum wells. For increasing magnetic field, we observe Zeeman spin-split 1D ballistic hole transport evolving to integer quantum Hall states, with well-defined quantized conductance increasing in multiples of e
2 / h down to the first integer filling factor ν = 1. These results establish strained germanium as a viable platform for complex experiments probing many-body states and quantum phase transitions.