Baseband control of single-electron silicon spin qubits in two dimensions
Florian K. Unseld (Kavli institute of nanoscience Delft, TU Delft - QCD/Vandersypen Lab, TU Delft - QuTech Advanced Research Centre)
Brennan Undseth (Kavli institute of nanoscience Delft, TU Delft - QCD/Vandersypen Lab, TU Delft - QuTech Advanced Research Centre)
Eline Raymenants (TU Delft - QCD/Vandersypen Lab, TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft)
Yuta Matsumoto (TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Vandersypen Lab, Kavli institute of nanoscience Delft)
Sander L. de Snoo (Kavli institute of nanoscience Delft, TU Delft - QCD/Vandersypen Lab, TU Delft - QuTech Advanced Research Centre)
Saurabh Karwal (TNO, TU Delft - BUS/TNO STAFF, TU Delft - QuTech Advanced Research Centre)
Oriol Pietx-Casas (TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft, TU Delft - QCD/Vandersypen Lab)
Alexander S. Ivlev (TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Veldhorst Lab, Kavli institute of nanoscience Delft)
Marcel Meyer (TU Delft - QCD/Veldhorst Lab, Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre)
Amir Sammak (TU Delft - BUS/TNO STAFF, TU Delft - QuTech Advanced Research Centre, TNO)
Menno Veldhorst (TU Delft - QuTech Advanced Research Centre, TU Delft - QN/Veldhorst Lab, Kavli institute of nanoscience Delft, TU Delft - QCD/Veldhorst Lab)
Giordano Scappucci (TU Delft - Quantum Circuit Architectures and Technology, TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Scappucci Lab, Kavli institute of nanoscience Delft)
Lieven M.K. Vandersypen (TU Delft - QuTech Advanced Research Centre, TU Delft - QN/Vandersypen Lab, Kavli institute of nanoscience Delft, TU Delft - QCD/Vandersypen Lab)
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Abstract
Micromagnet-enabled electric-dipole spin resonance (EDSR) is an established method for high-fidelity single-spin control in silicon, although so far experiments have been restricted to one-dimensional arrays. In contrast, qubit control based on hopping spins has recently emerged as a compelling alternative, with high-fidelity baseband control realized in sparse two-dimensional hole arrays in germanium. In this work, we commission a 28Si/SiGe 2 × 2 quantum dot array both as a four-qubit device using EDSR and as a two-qubit device using baseband hopping control. We establish a lower bound on the fidelity of the hopping gate of 99.50(6)%, which is similar to the average fidelity of the resonant gate. The hopping gate also circumvents the transient pulse-induced resonance shift from heating observed during EDSR operation. To motivate hopping spins as an attractive means of scaling silicon spin-qubit arrays, we propose an extensible nanomagnet design that enables engineered baseband control of large spin arrays.
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