Coupled vertical double quantum dots at single-hole occupancy
Alexander Ivlev (TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Veldhorst Lab, Kavli institute of nanoscience Delft)
Hanifa Tidjani (Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Veldhorst Lab)
S.D. Oosterhout (TU Delft - QuTech Advanced Research Centre, TNO, TU Delft - BUS/TNO STAFF)
A. Sammak (TU Delft - QuTech Advanced Research Centre, TNO, TU Delft - BUS/TNO STAFF)
G. Scappucci (TU Delft - QCD/Scappucci Lab, TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft)
M. Veldhorst (Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre, TU Delft - QN/Veldhorst Lab)
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Abstract
Gate-defined quantum dots define an attractive platform for quantum computation and have been used to confine individual charges in a planar array. Here, we demonstrate control over vertical double quantum dots confined in a strained germanium double quantum well. We sense individual charge transitions with a single-hole transistor. The vertical separation between the quantum wells provides a sufficient difference in capacitive coupling to distinguish quantum dots located in the top and bottom quantum wells. Tuning the vertical double quantum dot to the (1,1) charge state confines a single-hole in each quantum well beneath a single plunger gate. By simultaneously accumulating holes under two neighboring plunger gates, we are able to tune to the (1,1,1,1) charge state. These results motivate quantum dot systems that exploit the third dimension, opening new opportunities for quantum simulation and quantum computing.
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