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Characterization of Thermal Expansion Coefficient of LPCVD Polycrystalline SiC Thin Films Using Two Section V-beam Actuators

Journal Article (2016)
Author(s)

S. Thomas (TU Delft - Electrical Engineering, Mathematics and Computer Science)

A. Jovic (TU Delft - Electrical Engineering, Mathematics and Computer Science)

B. Morana (TU Delft - Electrical Engineering, Mathematics and Computer Science)

F. Buja (TU Delft - Mechanical Engineering)

A. Gkouzou (TU Delft - Mechanical Engineering)

G. Pandraud (TU Delft - Electrical Engineering, Mathematics and Computer Science)

P.M. Sarro (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Research Group
Electronic Components, Technology and Materials
DOI related publication
https://doi.org/10.1016/j.proeng.2016.11.379 Final published version
More Info
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Publication Year
2016
Language
English
Research Group
Electronic Components, Technology and Materials
Volume number
168
Pages (from-to)
1144-1147
Event
Eurosensors 2016 (2016-09-04 - 2016-09-07), Budapest, Hungary
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263
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Abstract

In this paper we present the characterization of the coefficient of thermal expansion (CTE) of in-situ doped polycrystalline SiC thin films, obtained by low pressure chemical vapor deposition (LPCVD). The material is characterized using V-beam actuators on which the temperature coefficient of resistance (TCR) and the in-plane displacement versus current are measured. A CTE value of 4.3 ± 0.4 ppm/K is obtained in the temperature region of 20°C to 300°C. This value is used in a finite element modeling (FEM) simulation of vertical SiC-SiO2 bimorph beams. For an actuator length of 700 μm, width of 100 μm and layer thickness of 2 μm, a displacement up to 200 μm can be obtained.