High resolution reactive ion etching of GaN and etch-induced effects.

Journal article (1999)

Authors

R Cheung External organisation
RJ Reeves External organisation
B Rong QN/Kavli Nanolab Delft - AS
SA Brown External organisation
EJM Fakkeldij External organisation
E.W.J.M. van der Drift QN/Kavli Nanolab Delft - AS
M Kamp External organisation
Research Group
QN/Kavli Nanolab Delft (AS) (TU Delft)
More Info
expand_more

Published Date

1999

Language

Undefined/Unknown

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Faculty

Applied Sciences

Department

QN/Quantum Nanoscience

Research Group

QN/Kavli Nanolab Delft