Deterministic Integration of hBN Emitter in Silicon Nitride Photonic Waveguide
Ali W. Elshaari (AlbaNova University Center)
Anas Skalli (AlbaNova University Center, Grenoble Institute of Technology)
Samuel Gyger (AlbaNova University Center)
Martin Nurizzo (Grenoble Institute of Technology, AlbaNova University Center)
Lucas Schweickert (AlbaNova University Center)
Iman Esmaeil Zadeh (TU Delft - ImPhys/Optics)
Mikael Svedendahl (AlbaNova University Center)
Stephan Steinhauer (AlbaNova University Center)
Val Zwiller (AlbaNova University Center)
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Abstract
Hybrid integration provides an important avenue for incorporating atom-like solid-state single-photon emitters into photonic platforms that possess no optically-active transitions. Hexagonal boron nitride (hBN) is particularly interesting quantum emitter for hybrid integration, as it provides a route for room-temperature quantum photonic technologies, coupled with its robustness and straightforward activation. Despite the recent progress of integrating hBN emitters in photonic waveguides, a deterministic, site-controlled process remains elusive. Here, the integration of selected hBN emitter in silicon nitride waveguide is demonstrated. A small misalignment angle of 4° is shown between the emission-dipole orientation and the waveguide propagation direction. The integrated emitter maintains high single-photon purity despite subsequent encapsulation and nanofabrication steps, delivering quantum light with zero delay second order correlation function (Formula presented.). The results provide an important step toward deterministic, large scale, quantum photonic circuits at room temperature using atom-like single-photon emitters.
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