Hybrid rf SQUID qubit based on high kinetic inductance
J. T. Peltonen (Aalto University, RIKEN Center for Emergent Matter Science (CEMS))
P. C.J.J. Coumou (Kavli institute of nanoscience Delft, TU Delft - QN/Mol. Electronics & Devices)
Z. H. Peng (RIKEN Center for Emergent Matter Science (CEMS), Hunan University)
T. M. Klapwijk (Moscow State Pedagogical University, Kavli institute of nanoscience Delft, TU Delft - QN/Klapwijk Lab)
J. S. Tsai (Tokyo University of Science, RIKEN Center for Emergent Matter Science (CEMS))
O. V. Astafiev (Moscow Institute of Physics and Technology, RIKEN Center for Emergent Matter Science (CEMS), Royal Holloway University of London, National Physical Laboratory)
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Abstract
We report development and microwave characterization of rf SQUID (Superconducting QUantum Interference Device) qubits, consisting of an aluminium-based Josephson junction embedded in a superconducting loop patterned from a thin film of TiN with high kinetic inductance. Here we demonstrate that the systems can offer small physical size, high anharmonicity, and small scatter of device parameters. The work constitutes a non-tunable prototype realization of an rf SQUID qubit built on the kinetic inductance of a superconducting nanowire, proposed in Phys. Rev. Lett. 104, 027002 (2010). The hybrid devices can be utilized as tools to shed further light onto the origin of film dissipation and decoherence in phase-slip nanowire qubits, patterned entirely from disordered superconducting films.
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