Radio-Frequency Reflectometry in Silicon-Based Quantum Dots
Y. Y. Liu (Harvard University)
S. G.J. Philips (TU Delft - QCD/Vandersypen Lab, TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft)
L. A. Orona (Harvard University)
N. Samkharadze (TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Vandersypen Lab)
T. McJunkin (University of Wisconsin-Madison)
E. R. Macquarrie (University of Wisconsin-Madison)
M. A. Eriksson (University of Wisconsin-Madison)
L. M.K. Vandersypen (TU Delft - QN/Vandersypen Lab, Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre)
A. Yacoby (Harvard University)
More Info
expand_more
Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.
Abstract
Radio-frequency (rf) reflectometry offers a fast and sensitive method for charge sensing and spin readout in gated quantum dots. We focus in this work on the implementation of rf readout in accumulation-mode gate-defined quantum dots, where the large parasitic capacitance poses a challenge. We describe and test two methods for mitigating the effect of the parasitic capacitance, one by on-chip modifications and a second by off-chip changes. We demonstrate that on-chip modifications enable high-performance charge readout in Si/SixGe1-x quantum dots, achieving a fidelity of 99.9% for a measurement time of 1μs.