Radio-Frequency Reflectometry in Silicon-Based Quantum Dots
Y-Y Liu (Harvard University)
S.G.J. Philips (TU Delft - QCD/Vandersypen Lab, TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft)
L. A. Orona (Harvard University)
Nodar Samkharadze (TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Vandersypen Lab)
T. McJunkin (University of Wisconsin-Madison)
E. R. Macquarrie (University of Wisconsin-Madison)
Mark A. Eriksson (University of Wisconsin-Madison)
L.M.K. Vandersypen (TU Delft - QN/Vandersypen Lab, Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre)
A. Yacoby (Harvard University)
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Abstract
Radio-frequency (rf) reflectometry offers a fast and sensitive method for charge sensing and spin readout in gated quantum dots. We focus in this work on the implementation of rf readout in accumulation-mode gate-defined quantum dots, where the large parasitic capacitance poses a challenge. We describe and test two methods for mitigating the effect of the parasitic capacitance, one by on-chip modifications and a second by off-chip changes. We demonstrate that on-chip modifications enable high-performance charge readout in Si/SixGe1-x quantum dots, achieving a fidelity of 99.9% for a measurement time of 1μs.