A Low Dark Count p-i-n Diode Based SPAD in CMOS Technology

Journal article (2015)

Authors

C. Veerappan Signal Processing Systems -

E. Charbon-Iwasaki-Charbon (OLD)Applied Quantum Architectures

Research Group

Signal Processing Systems () (TU Delft)

CMOS Single-photon avalanche diode (SPAD) Wide depletion P-i-n Substrate isolation

To reference this document use:

http://resolver.tudelft.nl/uuid:4aea00b5-603f-41c6-9028-5d888ac419b0

More Info

expand_more

Published Date

18-09-2015

Language

English

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Signal Processing Systems

Abstract

In this paper, a novel CMOS single-photon avalanche diode (SPAD) is presented, and the device is designed using a vertical p-i-n diode construction. The p-i-n diode with a wide depletion region enables a low-noise operation. The proposed design achieves dark count rates of 1.5 cps/μm2 at 11 V excess bias, while the photon detection probability (PDP) is greater than 40% from 460 to 600 nm. Through the operation at very high excess bias voltages, it is possible to reach the PDP compression point where sensitivity to the breakdown voltage is low, thus ensuring high PDP uniformity; this feature makes it, especially, suitable for multimegapixel SPAD arrays.