Decoupling Edge Versus Bulk Conductance in the Trivial Regime of an InAs/GaSb Double Quantum Well Using Corbino Ring Geometry
Binh Minh Nguyen (HRL Laboratories)
Andrey A. Kiselev (HRL Laboratories)
Ramsey Noah (HRL Laboratories)
Wei Yi (HRL Laboratories)
Fanming Qu (TU Delft - QRD/Kouwenhoven Lab, TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft)
Arjan J.A. Beukman (Kavli institute of nanoscience Delft, TU Delft - QRD/Kouwenhoven Lab, TU Delft - QuTech Advanced Research Centre)
Folkert K. De Vries (TU Delft - QuTech Advanced Research Centre, TU Delft - QRD/Kouwenhoven Lab, Kavli institute of nanoscience Delft)
Jasper Van Veen (Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre, TU Delft - QRD/Kouwenhoven Lab)
Stevan Nadj-Perge (Kavli institute of nanoscience Delft, TU Delft - QN/Quantum Transport, TU Delft - QuTech Advanced Research Centre)
Leo P. Kouwenhoven (TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft, TU Delft - QRD/Kouwenhoven Lab)
Morten Kjaergaard (University of Copenhagen)
Henri J. Suominen (University of Copenhagen)
Fabrizio Nichele (University of Copenhagen)
Charles M. Marcus (University of Copenhagen)
Michael J. Manfra (Purdue University)
Marko Sokolich (HRL Laboratories)
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Abstract
A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically predicted topological system with a temperature-insensitive linear resistivity per unit length in the range of 2 kΩ/μm. A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n type.
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