Decoupling Edge Versus Bulk Conductance in the Trivial Regime of an InAs/GaSb Double Quantum Well Using Corbino Ring Geometry

Journal article (2016)

Authors

Binh Minh Nguyen HRL Laboratories
Andrey A. Kiselev HRL Laboratories
Morten Kjaergaard University of Copenhagen
Henri J. Suominen University of Copenhagen
Fabrizio Nichele University of Copenhagen
Charles Marcus University of Copenhagen
Michael J. Manfra Purdue University
Marko Sokolich HRL Laboratories
Ramsey Noah HRL Laboratories
Wei Yi HRL Laboratories
F. Qu Kavli institute of nanoscience Delft, QuTech Advanced Research Centre, QRD/Kouwenhoven Lab - QuTech Advanced Research Centre
A.J.A. Beukman Kavli institute of nanoscience Delft, QRD/Kouwenhoven Lab - QuTech Advanced Research Centre , QuTech Advanced Research Centre
F.K. de Vries QRD/Kouwenhoven Lab - QuTech Advanced Research Centre , QuTech Advanced Research Centre, Kavli institute of nanoscience Delft
J. van Veen Kavli institute of nanoscience Delft, QuTech Advanced Research Centre, QRD/Kouwenhoven Lab - QuTech Advanced Research Centre
S. Nadj-Perge QN/Quantum Transport , QuTech Advanced Research Centre, Kavli institute of nanoscience Delft
Leo P. Kouwenhoven QuTech Advanced Research Centre, Kavli institute of nanoscience Delft, QRD/Kouwenhoven Lab - QuTech Advanced Research Centre
Research Group
QRD/Kouwenhoven Lab (QuTech Advanced Research Centre) (TU Delft)
Copyright: © 2016 Binh Minh Nguyen, Andrey A. Kiselev, Ramsey Noah, Wei Yi, F. Qu, A.J.A. Beukman, F.K. de Vries, J. van Veen, S. Nadj-Perge, Leo P. Kouwenhoven, Morten Kjaergaard, Henri J. Suominen, Fabrizio Nichele, Charles M. Marcus, Michael J. Manfra, Marko Sokolich
DOI
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https://doi.org/10.1103/PhysRevLett.117.077701
More Info
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Published Date

12-08-2016

Language

English

Faculty

QuTech Advanced Research Centre

Department

Qubit Research Division

Research Group

QRD/Kouwenhoven Lab

Abstract

A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically predicted topological system with a temperature-insensitive linear resistivity per unit length in the range of 2 kΩ/μm. A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n type.