Entropy driven inductive response of topological insulators

Journal Article (2025)
Author(s)

A.M. Bozkurt (TU Delft - QRD/Wimmer Group, TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft, Sabanci University)

Sofie Kölling (University of Twente)

Alexander Brinkman (University of Twente)

Inanç Adagideli (Sabanci University, TUBITAK, University of Twente)

Research Group
QRD/Wimmer Group
DOI related publication
https://doi.org/10.21468/SciPostPhysCore.8.1.023
More Info
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Publication Year
2025
Language
English
Research Group
QRD/Wimmer Group
Issue number
1
Volume number
8
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Abstract

3D topological insulators are characterized by an insulating bulk and extended surface states exhibiting a helical spin texture. In this work, we investigate the hyperfine interaction between the spin-charge coupled transport of electrons and the nuclear spins in these surface states. Previous work has predicted that in the quantum spin Hall insulator phase, work can be extracted from a bath of polarized nuclear spins as a resource. We employ nonequilibrium Green's function analysis to show that a similar effect exists on the surface of a 3D topological insulator, albeit rescaled by the ratio between electronic mean free path and device length. The induced current due to thermal relaxation of polarized nuclear spins has an inductive nature. We emphasize the inductive response by rewriting the current-voltage relation in harmonic response as a lumped element model containing two parallel resistors and an inductor. In a low-frequency analysis, a universal inductance value emerges that is only dependent on the device's aspect ratio. This scaling offers a means of miniaturizing inductive circuit elements. An efficiency estimate follows from comparing the spin-flip induced current to the Ohmic contribution. The inductive effect is most prominent in topological insulators which have a large number of spinful nuclei per coherent segment, of which the volume is given by the mean free path length, Fermi wavelength and penetration depth of the surface state.