Investigations of SiC VDMOSFET with Floating Island Structure Based on TCAD
Hou Cai Luo (Chongqing University, Guilin University of Electronic Technology)
Li Ming Wang (Chongqing University, Guilin University of Electronic Technology)
Shao Gang Wang (Guilin University of Electronic Technology, Chongqing University)
Chun Jian Tan (TU Delft - Electronic Components, Technology and Materials)
Kai Zheng (Chongqing University)
Guo Qi Zhang (TU Delft - Electronic Components, Technology and Materials)
Lu Qi Tao (Chongqing University)
Xian Ping Chen (Guilin University of Electronic Technology, Chongqing University)
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Abstract
Using TCAD simulations, the silicon carbide metal-oxide-semiconductor field-effect transistor with p-type floating islands (SiC FLIMOSFET) is systematically investigated in this paper. The doping concentration (N FLI ), length (L), and position (D1) of floating islands are optimized according to breakdown voltage (BV), electric field distribution, and on-resistance. The results show that NFLI = 1 × 10 17 cm -3 , L = 2.5 μm, and D1 = 9.0 μm are superior values for FLI structure considering tradeoff between BV and on-resistance. With the same BV capacity, the on-resistance of SiC FLIMOSFET is decrease by 32% comparing to the conventional SiC VDMOSFET. Besides, the dynamic property shows 16.5% reduction of FoM R {on} cdot Q GD in the SiC FLIMOSFET. Significantly, comparing to the conventional structure, the electro-thermal simulation indicates that the SiC FLIMOSFET has a higher robustness under short-circuit condition owing to the reduction of thermal stress in SiC/SiO 2 interface. All the results show that the SiC FLIMOSFET has a good potential in SiC power device.