Investigations of SiC VDMOSFET with Floating Island Structure Based on TCAD

Journal article (2019)

Authors

Houcai Luo Guilin University of Electronic Technology, Chongqing University
Li Ming Wang Chongqing University, Guilin University of Electronic Technology
Shao Gang Wang Guilin University of Electronic Technology, Chongqing University
C. Tan Electronic Components, Technology and Materials - EEMCS
Kai Zheng Chongqing University
Kouchi Zhang Electronic Components, Technology and Materials - EEMCS
Lu Qi Tao Chongqing University
X. Chen Guilin University of Electronic Technology, Chongqing University
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
TCAD Breakdown voltage (BV) Electro-thermal simulation ON-resistance Silicon carbide metal-oxide-semiconductor field-effect transistor with p-type floating islands (SiC FLIMOSFET)
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Published Date

2019

Language

English

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials

Abstract

Using TCAD simulations, the silicon carbide metal-oxide-semiconductor field-effect transistor with p-type floating islands (SiC FLIMOSFET) is systematically investigated in this paper. The doping concentration (N FLI ), length (L), and position (D1) of floating islands are optimized according to breakdown voltage (BV), electric field distribution, and on-resistance. The results show that NFLI = 1 × 10 17 cm -3 , L = 2.5 μm, and D1 = 9.0 μm are superior values for FLI structure considering tradeoff between BV and on-resistance. With the same BV capacity, the on-resistance of SiC FLIMOSFET is decrease by 32% comparing to the conventional SiC VDMOSFET. Besides, the dynamic property shows 16.5% reduction of FoM R {on} cdot Q GD in the SiC FLIMOSFET. Significantly, comparing to the conventional structure, the electro-thermal simulation indicates that the SiC FLIMOSFET has a higher robustness under short-circuit condition owing to the reduction of thermal stress in SiC/SiO 2 interface. All the results show that the SiC FLIMOSFET has a good potential in SiC power device.

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