Regaining a Spatial Dimension

Mechanically Transferrable Two-Dimensional InAs Nanofins Grown by Selective Area Epitaxy

Journal article (2019)

Authors

Jakob Seidl University of New South Wales
J. G. Gluschke University of New South Wales
X Yuan Central South University China, Australian National University
S. Naureen IRnova AB, Australian National University
N. Shahid Finisar Sweden AB, Australian National University
H. H. Tan Australian National University
C Jagadish Australian National University
A. P. Micolich University of New South Wales
P. Caroff-Gaonac'h Microsoft Quantum Lab Delft, QRD/Kouwenhoven Lab - QuTech Advanced Research Centre
Research Group
QRD/Kouwenhoven Lab (QuTech Advanced Research Centre) (TU Delft)
Nanowires Hall effect Nanofin Selective area epitaxy
More Info
expand_more

Published Date

2019

Language

English

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Faculty

QuTech Advanced Research Centre

Department

Qubit Research Division

Research Group

QRD/Kouwenhoven Lab

Abstract

We report a method for growing rectangular InAs nanofins with deterministic length, width, and height by dielectric-templated selective-area epitaxy. These freestanding nanofins can be transferred to lay flat on a separate substrate for device fabrication. A key goal was to regain a spatial dimension for device design compared to nanowires, while retaining the benefits of bottom-up epitaxial growth. The transferred nanofins were made into devices featuring multiple contacts for Hall effect and four-terminal resistance studies, as well as a global back-gate and nanoscale local top-gates for density control. Hall studies give a 3D electron density 2.5-5 × 1017 cm-3, corresponding to an approximate surface accumulation layer density 3-6 × 1012 cm-2 that agrees well with previous studies of InAs nanowires. We obtain Hall mobilities as high as 1200 cm2/(V s), field-effect mobilities as high as 4400 cm2/(V s), and clear quantum interference structure at temperatures as high as 20 K. Our devices show excellent prospects for fabrication into more complicated devices featuring multiple ohmic contacts, local gates, and possibly other functional elements, for example, patterned superconductor contacts, that may make them attractive options for future quantum information applications.