Advanced physics-based modeling of TFETs
A comprehensive geometric and material perspective
M. Villegas (Universidad San Francisco de Quito)
P. Prócel (TU Delft - Electrical Engineering, Mathematics and Computer Science)
S. Guitarra (Universidad San Francisco de Quito)
L. M. Prócel (Universidad San Francisco de Quito)
L. Trojman (ISEP)
More Info
expand_more
Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.
Abstract
This work presents a material-centric, physics-based model that predicts the electrical behavior of Tunnel Field-Effect Transistors (TFETs) by incorporating both band-to-band tunneling (BTBT) and trap-assisted tunneling (TAT) mechanisms. The model accounts for key material-dependent parameters, such as variations in effective mass and trap density, enabling a comprehensive analysis of TFET performance. Validation against experimental data from both conventional silicon high-k metal gate and III–V polar TFETs demonstrates the model's predictive accuracy. This approach provides valuable insights into performance trade-offs, serving as a robust tool for the design, optimization, and material selection of next-generation TFET technologies.
Files
File under embargo until 20-12-2026