Perovskite thin films via atomic layer deposition

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Perovskite thin films via atomic layer deposition

Journal Article (2015)

Author(s)

Brandon R. Sutherland (University of Toronto)

Sjoerd Hoogland (University of Toronto)

Michael M. Adachi (University of Toronto)

Pongsakorn Kanjanaboos (University of Toronto)

Chris T O Wong (University of Toronto)

Jeffrey J. McDowell (University of Toronto)

Jixian Xu (University of Toronto)

Oleksandr Voznyy (University of Toronto)

Zhijun Ning (University of Toronto)

Arjan J. Houtepen (TU Delft - Applied Sciences)

Edward H. Sargent (University of Toronto)

Research Group

ChemE/Opto-electronic Materials

Atomic layer deposition Transient absorption Perovskites Optical gain

DOI related publication

https://doi.org/10.1002/adma.201403965 Final published version

To reference this document use

https://resolver.tudelft.nl/uuid:5ac3d21d-82e8-4b98-804f-f6412695eacb

More Info

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Publication Year

2015

Language

English

Research Group

ChemE/Opto-electronic Materials

Issue number

1

Volume number

27

Pages (from-to)

53-58

Downloads counter

238

Abstract

(Graph Presented) A new method to deposit perovskite thin films that benefit from the thickness control and conformality of atomic layer deposition (ALD) is detailed. A seed layer of ALD PbS is place-exchanged with PbI₂ and subsequently CH₃NH₃PbI₃ perovskite. These films show promising optical properties, with gain coefficients of 3200 ± 830 cm^-1.