Non-universal current flow near the metal-insulator transition in an oxide interface
Eylon Persky (Bar-Ilan University)
Naor Vardi (Bar-Ilan University)
Ana Mafalda R.V.L. Monteiro (Kavli institute of nanoscience Delft)
T.C. van Thiel (TU Delft - QN/Caviglia Lab)
Hyeok Yoon (Stanford Synchrotron Laboratory, SLAC National Accelerator Laboratory)
Yanwu Xie (Zhejiang University, SLAC National Accelerator Laboratory, Stanford Synchrotron Laboratory)
Benoît Fauqué (PSL Research University)
A. Caviglia (TU Delft - QN/Caviglia Lab, Kavli institute of nanoscience Delft)
Harold Y. Hwang (Stanford Synchrotron Laboratory, SLAC National Accelerator Laboratory)
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Abstract
In systems near phase transitions, macroscopic properties often follow algebraic scaling laws, determined by the dimensionality and the underlying symmetries of the system. The emergence of such universal scaling implies that microscopic details are irrelevant. Here, we locally investigate the scaling properties of the metal-insulator transition at the LaAlO3/SrTiO3 interface. We show that, by changing the dimensionality and the symmetries of the electronic system, coupling between structural and electronic properties prevents the universal behavior near the transition. By imaging the current flow in the system, we reveal that structural domain boundaries modify the filamentary flow close to the transition point, preventing a fractal with the expected universal dimension from forming.
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