Influence of deposition parameter and temperature on stress and strain of in-situ doped PECVD silicon carbide

Pham, HMT; de Boer, C.R.; Sarro, Pasqualina M

Influence of deposition parameter and temperature on stress and strain of in-situ doped PECVD silicon carbide

Conference paper (2001)

Authors

HMT Pham External organisation

C.R. de Boer Electronic Components, Technology and Materials -

Pasqualina M Sarro Electronic Components, Technology and Materials -

Research Group

Electronic Components, Technology and Materials () (TU Delft)

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Published Date

2001

Language

Undefined/Unknown

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials