Influence of deposition parameter and temperature on stress and strain of in-situ doped PECVD silicon carbide

Conference paper (2001)

Authors

HMT Pham External organisation
C.R. de Boer Electronic Components, Technology and Materials - EEMCS
Pasqualina M Sarro Electronic Components, Technology and Materials - EEMCS
Research Group
Electronic Components, Technology and Materials (EEMCS) (TU Delft)
More Info
expand_more

Published Date

2001

Language

Undefined/Unknown

Reuse Rights

Other than for strictly personal use, it is not permitted to download, forward or distribute the text or part of it, without the consent of the author(s) and/or copyright holder(s), unless the work is under an open content license such as Creative Commons.

Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronic Components, Technology and Materials