Influence of deposition parameter and temperature on stress and strain of in-situ doped PECVD silicon carbide
Conference Paper
(2001)
Author(s)
HMT Pham (External organisation)
C.R. de Boer (TU Delft - Electronic Components, Technology and Materials)
Pasqualina Sarro (TU Delft - Electronic Components, Technology and Materials)
Research Group
Electronic Components, Technology and Materials
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https://resolver.tudelft.nl/uuid:5ef3813a-bc06-4693-9cc0-a32b185640c1
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Publication Year
2001
Research Group
Electronic Components, Technology and Materials
Pages (from-to)
153-154
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