P-type β-Ga2O3 metal-semiconductor-metal solar-blind photodetectors with extremely high responsivity and gain-bandwidth product

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P-type β-Ga2O3 metal-semiconductor-metal solar-blind photodetectors with extremely high responsivity and gain-bandwidth product

Journal Article (2020)

Author(s)

Z.X. Jiang (Fudan University, Shenzhen Institute of Wide-bandgap Semiconductors)

Z.Y. Wu (Shenzhen Institute of Wide-bandgap Semiconductors, Fudan University)

C.C. Ma (Shenzhen Institute of Wide-bandgap Semiconductors, Fudan University)

J.N. Deng (Fudan University)

H. Zhang (Fudan University)

Y. Xu (Nanjing University)

J.D. Ye (Nanjing University)

Z.L. Fang (Shenzhen Institute of Wide-bandgap Semiconductors, Fudan University)

G.Q Zhang (TU Delft - Electronic Components, Technology and Materials, Fudan University)

J.Y. Kang (Xiamen University)

T.Y. Zhang (Shanghai University)

Exciton Noise and gain-bandwidth product P-type electrical properties Photoresponsivity and detectivity Solar-blind photodetector

DOI related publication

https://doi.org/10.1016/j.mtphys.2020.100226 Final published version

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https://resolver.tudelft.nl/uuid:5fae3de7-d2bf-417d-a19e-6d19ab3c319b

More Info

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Publication Year

2020

Language

English

Volume number

14

Article number

100226

Pages (from-to)

1-9

Downloads counter

367

Abstract

P-type β-Ga2O3 films deep-ultraviolet (DUV) solar-blind metal-semiconductor-metal (MSM) photodetectors (PDs) are fabricated with extremely high photoresponsivity (9.5 × 103 A/W), external quantum efficiency (4.7 × 106%), detectivity (1.5 × 1015 Jones), and gain-bandwidth product (106) at 5 V bias, very low noise equivalent power (4.9 × 10−16 W/Hz1/2) and high specific detectivity (1.9 × 1013 Jones) at 1 kHz and 3 V bias. The excellent performances of the p-type β-Ga2O3 DUV MSM PDs are attributed to the charge carrier multiplication via collective excitation of aggregated excitons and/or electron-hole liquid within the fabricated high-quality p-type β-Ga2O3 films, which possess the room-temperature Hall resistivity of 52.6 Ωcm, the hole mobility of 41.4 cm2/V⋅s, and the hole concentration of 2.86 × 1015 cm−3. The unprecedentedly high photoresponsivity and detectivity and the carrier multiplication mechanism in high-quality p-type β-Ga2O3 films pave a novel way to fabricate super sensitive DUV PDs based on p-type wide-bandgap oxide semiconductors.