Benchmarking Gate Fidelities in a Si/SiGe Two-Qubit Device
X. Xue (Kavli institute of nanoscience Delft, TU Delft - QCD/Vandersypen Lab, TU Delft - QuTech Advanced Research Centre)
T. F. Watson (Kavli institute of nanoscience Delft, TU Delft - QCD/Vandersypen Lab, TU Delft - QuTech Advanced Research Centre)
J. Helsen (TU Delft - QuTech Advanced Research Centre, TU Delft - Quantum Information and Software)
D. R. Ward (University of Wisconsin-Madison)
D. E. Savage (University of Wisconsin-Madison)
M. G. Lagally (University of Wisconsin-Madison)
S. N. Coppersmith (University of Wisconsin-Madison)
M. A. Eriksson (University of Wisconsin-Madison)
S. Wehner (TU Delft - Quantum Internet Division, TU Delft - Quantum Information and Software, TU Delft - QuTech Advanced Research Centre)
L. M.K. Vandersypen (TU Delft - QN/Vandersypen Lab, TU Delft - QuTech Advanced Research Centre, TU Delft - QCD/Vandersypen Lab, Kavli institute of nanoscience Delft)
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Abstract
We report the first complete characterization of single-qubit and two-qubit gate fidelities in silicon-based spin qubits, including cross talk and error correlations between the two qubits. To do so, we use a combination of standard randomized benchmarking and a recently introduced method called character randomized benchmarking, which allows for more reliable estimates of the two-qubit fidelity in this system, here giving a 92% fidelity estimate for the controlled-Z gate. Interestingly, with character randomized benchmarking, the two-qubit gate fidelity can be obtained by studying the additional decay induced by interleaving the two-qubit gate in a reference sequence of single-qubit gates only. This work sets the stage for further improvements in all the relevant gate fidelities in silicon spin qubits beyond the error threshold for fault-tolerant quantum computation.