Condition Monitoring Algorithm for Piezoresistive Silicon-Based Stress Sensor Data Obtained from Electronic Control Units

Conference Paper (2017)
Author(s)

Alexandru Prisacaru (Robert Bosch GmbH)

Alicja Palczynska (Robert Bosch GmbH)

Przemyslaw Jakub Gromala (Robert Bosch GmbH)

Bongtae Han (University of Maryland)

Guo Qi Zhang (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Research Group
Electronic Components, Technology and Materials
DOI related publication
https://doi.org/10.1109/ECTC.2017.73 Final published version
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Publication Year
2017
Language
English
Research Group
Electronic Components, Technology and Materials
Article number
7999824
Pages (from-to)
1119-1127
ISBN (electronic)
978-1-5090-6315-4
Event
67th IEEE Electronic Components and Technology Conference, ECTC 2017 (2017-05-30 - 2017-06-02), Lake Buena Vista, United States
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Abstract

Recent advancements in automotive technologies, most notably autonomous driving, demand electronic systemsmuch more complex than realized in the past. The automotiveindustry has been forced to adopt advanced consumerelectronics to satisfy the demand, and thus it becomes morechallenging to assess system reliability while adopting the newtechnologies. The system level reliability can be enforced byimplementing a process called condition monitoring. In thispaper, a piezoresistive silicon based stress sensor isimplemented to detect physical damages in outer moldedelectronic control units (ECU) subjected to reliability testingconditions. The test vehicle consists of six DPAK powerpackages and three stress sensors mounted on a PrintedCircuit Board (PCB). A unique algorithm is proposed andimplemented to handle the data obtained from thepiezoresistive stress sensing cells. The accuracy of measureddata is examined by Finite Element method (FEM), and thephysical changes are validated with Scanning AcousticMicroscope (SAM).

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