Modeling of Two-Dimensional Hyperbolic Heat Conduction in Silicon-On-Insulator Transistor by Equivalent RLC Network

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Modeling of Two-Dimensional Hyperbolic Heat Conduction in Silicon-On-Insulator Transistor by Equivalent RLC Network

Conference Paper (2018)

Author(s)

Amir Mirza Gheytaghi (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Guo Qi Zhang (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Huaiyu Ye (Chongqing University)

Research Group

Electronic Components, Technology and Materials

Heat transfer Conductivity Mathematical model Transistors Nanoscale devices Heating systems

DOI related publication

https://doi.org/10.1109/EuroSimE.2018.8369870 Final published version

To reference this document use

https://resolver.tudelft.nl/uuid:681a3241-8b9e-4c55-83e5-982ef32a084f

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Publication Year

2018

Language

English

Research Group

Electronic Components, Technology and Materials

Pages (from-to)

1-5

ISBN (electronic)

978-1-5386-2359-6

Event

EuroSimE 2018 (2018-04-15 - 2018-04-18), Toulouse, France

Downloads counter

187

Abstract

Thermal analysis plays a crucial role in designing and reliability of contemporary semiconductor devices. In this paper, the analogy between the electrical and thermal systems is extended for analysis of nonlinear two dimensional hyperbolic heat conduction (HHC) in Silicon-On-Insulator (SOI) transistor. The equivalent Resistance-Inductance-Capacitance(RLC) transmission line network is solved fast and easily by an electric solver tool such as HSPICE. The influence of a temperature dependent thermal conductivity and relaxation time in temperature distribution is discussed. The results demonstrate the wave character phenomena of the heat propagation that is occurring in nano-scaled high frequency electronic devices.