Modeling of Two-Dimensional Hyperbolic Heat Conduction in Silicon-On-Insulator Transistor by Equivalent RLC Network

Conference Paper (2018)
Author(s)

Amir Mirza Gheytaghi (TU Delft - Electronic Components, Technology and Materials)

Guo Qi Zhang (TU Delft - Electronic Components, Technology and Materials)

H Ye (Chongqing University)

Research Group
Electronic Components, Technology and Materials
DOI related publication
https://doi.org/10.1109/EuroSimE.2018.8369870
More Info
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Publication Year
2018
Language
English
Research Group
Electronic Components, Technology and Materials
Pages (from-to)
1-5
ISBN (electronic)
978-1-5386-2359-6

Abstract

Thermal analysis plays a crucial role in designing and reliability of contemporary semiconductor devices. In this paper, the analogy between the electrical and thermal systems is extended for analysis of nonlinear two dimensional hyperbolic heat conduction (HHC) in Silicon-On-Insulator (SOI) transistor. The equivalent Resistance-Inductance-Capacitance(RLC) transmission line network is solved fast and easily by an electric solver tool such as HSPICE. The influence of a temperature dependent thermal conductivity and relaxation time in temperature distribution is discussed. The results demonstrate the wave character phenomena of the heat propagation that is occurring in nano-scaled high frequency electronic devices.

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