Modeling of Two-Dimensional Hyperbolic Heat Conduction in Silicon-On-Insulator Transistor by Equivalent RLC Network

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Modeling of Two-Dimensional Hyperbolic Heat Conduction in Silicon-On-Insulator Transistor by Equivalent RLC Network

Conference Paper (2018)

Author(s)

Amir Mirza Gheytaghi (TU Delft - Electronic Components, Technology and Materials)

Guo Qi Zhang (TU Delft - Electronic Components, Technology and Materials)

Huaiyu Ye (Chongqing University)

Heat transfer Conductivity Mathematical model Transistors Nanoscale devices Heating systems

DOI related publication

https://doi.org/10.1109/EuroSimE.2018.8369870 Final published version

To reference this document use

https://resolver.tudelft.nl/uuid:681a3241-8b9e-4c55-83e5-982ef32a084f

More Info

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Publication Year

2018

Language

English

Pages (from-to)

1-5

ISBN (electronic)

978-1-5386-2359-6

Event

Downloads counter

172

Abstract

Thermal analysis plays a crucial role in designing and reliability of contemporary semiconductor devices. In this paper, the analogy between the electrical and thermal systems is extended for analysis of nonlinear two dimensional hyperbolic heat conduction (HHC) in Silicon-On-Insulator (SOI) transistor. The equivalent Resistance-Inductance-Capacitance(RLC) transmission line network is solved fast and easily by an electric solver tool such as HSPICE. The influence of a temperature dependent thermal conductivity and relaxation time in temperature distribution is discussed. The results demonstrate the wave character phenomena of the heat propagation that is occurring in nano-scaled high frequency electronic devices.