Integrated SiGe Detectors for Si Photonic Sensor Platforms

Conference Paper (2017)
Author(s)

Grégory Pandraud (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Silvana Milosavljevic (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Amir Sammak (TU Delft - QuTech Advanced Research Centre, TU Delft - Business Development)

Matteo Cherchi (VTT Technical Research Center of Finland)

Aleksandar Jovic (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Pasqualina Sarro (TU Delft - Electrical Engineering, Mathematics and Computer Science)

Research Group
EKL Processing
DOI related publication
https://doi.org/10.3390/proceedings1040559 Final published version
More Info
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Publication Year
2017
Language
English
Research Group
EKL Processing
Article number
559
Pages (from-to)
1-5
Event
Eurosensors 2017 (2017-09-03 - 2017-09-06), Paris, France
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306
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Abstract

In this work, we present the results of integrated Ge detectors grown on a Si photonic platform for sensing applications. The detectors are fabricated on a passive photonic circuit for maximum coupling efficiency. Measurement results at 1300 nm wavelength show a responsivity of 0.2 A/W and very low dark current levels. For a voltage range between 0 and −10 V, the dark current is better than 0.1 nA which is crucial for highly sensitivity devices and applications, like Optical
Coherence Tomography.