Atomic resolution monitoring of cation exchange in CdSe-PbSe hetero-nanocrystals during epitaxial solid-solid-vapor growth

Journal article (2014)

Authors

A.O. Yalcin QN/High Resolution Electron Microscopy
Z. Fan Engineering Thermodynamics - Mechanical, Maritime and Materials Engineering
G van Tenderloo External organisation
T.J.H. Vlugt Engineering Thermodynamics - Mechanical, Maritime and Materials Engineering
D Vanmaekelbergh External organisation
H.W. Zandbergen QN/High Resolution Electron Microscopy
M.A. van Huis QN/High Resolution Electron Microscopy
B Goris External organisation
WF Li External organisation
R de Koster External organisation
C. Fang QN/High Resolution Electron Microscopy
A van Blaaderen External organisation
M Casavola External organisation
F.D. Tichelaar QN/High Resolution Electron Microscopy
S. Bals External organisation
Research Group
QN/High Resolution Electron Microscopy
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Published Date

2014

Language

English

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Research Group

QN/High Resolution Electron Microscopy

Abstract

Here, we show a novel solid-solid-vapor (SSV) growth mechanism whereby epitaxial growth of heterogeneous semiconductor nanowires takes place by evaporation-induced cation exchange. During heating of PbSe-CdSe nanodumbbells inside a transmission electron microscope (TEM), we observed that PbSe nanocrystals grew epitaxially at the expense of CdSe nanodomains driven by evaporation of Cd. Analysis of atomic-resolution TEM observations and detailed atomistic simulations reveals that the growth process is mediated by vacancies.