Dangling-bond defect in a-Si:H: Characterization of network and strain effects by first-principles calculation of the EPR parameters

Pfanner, G; Freysoldt, C; Neugebauer, J; Inam, F; Drabold, D; Jarolímek, K.; Zeman, M.

Dangling-bond defect in a-Si:H: Characterization of network and strain effects by first-principles calculation of the EPR parameters

Journal article (2013)

Authors

G Pfanner External organisation

C Freysoldt External organisation

J Neugebauer External organisation

F Inam External organisation

D Drabold External organisation

K. Jarolímek Photovoltaic Materials and Devices

M. Zeman Photovoltaic Materials and Devices

Research Group

Photovoltaic Materials and Devices

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Published Date

2013

Language

English

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Research Group

Photovoltaic Materials and Devices

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