A design and qualification of LED flip Chip-on-Board module with tunable color temperatures
Jiajie Fan (Changzhou Institute of Technology Research for Solid State Lighting, Hohai University)
Jianwu Cao (Hohai University, Changzhou Institute of Technology Research for Solid State Lighting)
Chaohua Yu (Changzhou Institute of Technology Research for Solid State Lighting, Hohai University)
Cheng Qian (Changzhou Institute of Technology Research for Solid State Lighting, Beihang University)
Xuejun Fan (Lamar University, Changzhou Institute of Technology Research for Solid State Lighting)
Guoqi Zhang (TU Delft - Electrical Engineering, Mathematics and Computer Science, Changzhou Institute of Technology Research for Solid State Lighting)
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Abstract
with the increasing requirements on guaranteeing the color uniformity and improving the luminous efficacy and manufacturing efficiency, a wafer level chip scale packaging (WLCSP) technology has been developed by thermally impressing a thin multiple phosphor film on a LED wafer, then being segmented into individual LED chips. In this paper, a high power white LED Chip-on-Board (COB) module with high color rendering index (CRI, Ra > 93) and tunable correlated color temperatures (CCTs) is prepared by the flip chip technology. In this COB module, the tunable color temperatures are achieved by using two types of white LED CSPs with different target CCTs of 3000 K and 5000 K. The thermal and photochromatic properties and the photochromatic stability of the COB module are studied through both experiments and simulations. The results show that: 1) The measured spectral power distribution (SPD) intensity of the prepared COB module is smaller than the arithmetic sum of SPD intensities of its each series connected CSPs, which may be attribute to the light absorption happened among CSPs; 2) The junction temperature and driven current have the different effects on the photochromatic properties of COB module (i.e. luminous flux, CCT and CRI); 3) The nonlinearity of luminous flux as a function of driven current and junction temperature should be considered in its modeling.