A 112W GaN dual input Doherty-Outphasing Power Amplifier

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A 112W GaN dual input Doherty-Outphasing Power Amplifier

Conference Paper (2016)

Author(s)

A. R. Qureshi (TU Delft - Electronics)

M. Acar (Ampleon Netherlands)

J. Qureshi (Ampleon Netherlands)

R. Wesson (Ampleon Netherlands)

L. C. N. de Vreede (TU Delft - Electronics)

Research Group

Electronics

RF Power Amplifier Base station Doherty Mixed-mode High-efficiency Outphasing Power back off

DOI related publication

https://doi.org/10.1109/mwsym.2016.7540194 Final published version

To reference this document use

https://resolver.tudelft.nl/uuid:6f46122a-7e98-4c0c-8954-34f0f399641f

More Info

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Publication Year

2016

Language

English

Research Group

Electronics

Pages (from-to)

1-4

ISBN (print)

978-1-5090-0699-1

ISBN (electronic)

978-1-5090-0698-4

Event

IEEE MTT-S International Microwave Symposium (IMS) 2016 (2016-05-22 - 2016-05-27), San Francisco, United States

Downloads counter

181

Abstract

This paper presents a novel dual-input Doherty-Outphasing Power Amplifier (DOPA) architecture that combines the efficiency advantages of Doherty and Outphasing amplifiers in power back-off (PBO). The proposed architecture, utilizes Doherty operation from peak power to -6dB PBO and mixed-mode outphasing from -6 to -14 dB PBO. A 2.14 GHz 112W GaN DOPA has been designed to demonstrate the concept, it provides 66% peak efficiency and more than 50% efficiency over a 12 dB PBO range.