A 112W GaN dual input Doherty-Outphasing Power Amplifier

Conference paper (2016)

Authors

A.R. Qureshi Electronics - EEMCS
M Acar Ampleon Netherlands
J.H. Batool Ampleon Netherlands
R Wesson Ampleon Netherlands
L.C.N. de Vreede Electronics - EEMCS
Research Group
Electronics (EEMCS) (TU Delft)
RF Power Amplifier Base station Doherty Mixed-mode High-efficiency Outphasing Power back off
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Published Date

2016-5

Language

English

Reuse Rights

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Faculty

Electrical Engineering, Mathematics and Computer Science

Department

Microelectronics

Research Group

Electronics

Abstract

This paper presents a novel dual-input Doherty-Outphasing Power Amplifier (DOPA) architecture that combines the efficiency advantages of Doherty and Outphasing amplifiers in power back-off (PBO). The proposed architecture, utilizes Doherty operation from peak power to -6dB PBO and mixed-mode outphasing from -6 to -14 dB PBO. A 2.14 GHz 112W GaN DOPA has been designed to demonstrate the concept, it provides 66% peak efficiency and more than 50% efficiency over a 12 dB PBO range.