High quality SiO2 deposited at 80oC by inductively coupled plasma enhanced CVD for flexible display application
Journal Article
(2010)
Author(s)
T Chen (TU Delft - Electronic Components, Technology and Materials)
R Ishihara (TU Delft - Electronic Components, Technology and Materials)
CIM Beenakker (TU Delft - Electronic Components, Technology and Materials)
Research Group
Electronic Components, Technology and Materials
DOI related publication
https://doi.org/10.1149/1.3430659
To reference this document use:
https://resolver.tudelft.nl/uuid:6f89ae06-1d7f-446a-9b15-7a41d08fe1de
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Publication Year
2010
Language
English
Research Group
Electronic Components, Technology and Materials
Issue number
8
Volume number
13
Pages (from-to)
89-91
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