Massively parallel fabrication of crack-defined gold break junctions featuring sub-3 nm gaps for molecular devices

Journal Article (2018)
Author(s)

Valentin Dubois (KTH Royal Institute of Technology)

Shyamprasad N. Raja (KTH Royal Institute of Technology)

Pascal Gehring (Kavli institute of nanoscience Delft, TU Delft - QN/van der Zant Lab)

Sabina Caneva (Kavli institute of nanoscience Delft, TU Delft - QN/van der Zant Lab)

Herre S.J. van der Zant (Kavli institute of nanoscience Delft, TU Delft - QN/van der Zant Lab)

Frank Niklaus (KTH Royal Institute of Technology)

Göran Stemme (KTH Royal Institute of Technology)

Research Group
QN/van der Zant Lab
DOI related publication
https://doi.org/10.1038/s41467-018-05785-2 Final published version
More Info
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Publication Year
2018
Language
English
Research Group
QN/van der Zant Lab
Issue number
1
Volume number
9
Article number
3433
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308
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Abstract

Break junctions provide tip-shaped contact electrodes that are fundamental components of nano and molecular electronics. However, the fabrication of break junctions remains notoriously time-consuming and difficult to parallelize. Here we demonstrate true parallel fabrication of gold break junctions featuring sub-3 nm gaps on the wafer-scale, by relying on a novel self-breaking mechanism based on controlled crack formation in notched bridge structures. We achieve fabrication densities as high as 7 million junctions per cm2, with fabrication yields of around 7% for obtaining crack-defined break junctions with sub-3 nm gaps of fixed gap width that exhibit electron tunneling. We also form molecular junctions using dithiol-terminated oligo(phenylene ethynylene) (OPE3) to demonstrate the feasibility of our approach for electrical probing of molecules down to liquid helium temperatures. Our technology opens a whole new range of experimental opportunities for nano and molecular electronics applications, by enabling very large-scale fabrication of solid-state break junctions.