Efficient Orthogonal Control of Tunnel Couplings in a Quantum Dot Array
Tzu Kan Hsiao (TU Delft - QCD/Vandersypen Lab, Kavli institute of nanoscience Delft, TU Delft - QuTech Advanced Research Centre)
C. J. van Diepen (Kavli institute of nanoscience Delft, TU Delft - QCD/Vandersypen Lab, TU Delft - QuTech Advanced Research Centre)
Uditendu Mukhopadhyay (TU Delft - QCD/Vandersypen Lab, TU Delft - QuTech Advanced Research Centre, Kavli institute of nanoscience Delft)
Christian Reichl (ETH Zürich)
W. Wegscheider (ETH Zürich)
L.M.K. Vandersypen (TU Delft - QCD/Vandersypen Lab, TU Delft - QuTech Advanced Research Centre, TU Delft - QN/Vandersypen Lab, Kavli institute of nanoscience Delft)
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Abstract
Electrostatically-defined semiconductor quantum dot arrays offer a promising platform for quantum computation and quantum simulation. However, crosstalk of gate voltages to dot potentials and interdot tunnel couplings complicates the tuning of the device parameters. To date, crosstalk to the dot potentials is routinely and efficiently compensated using so-called virtual gates, which are specific linear combinations of physical gate voltages. However, due to exponential dependence of tunnel couplings on gate voltages, crosstalk to the tunnel barriers is currently compensated through a slow iterative process. In this work, we show that the crosstalk on tunnel barriers can be efficiently characterized and compensated for, using the fact that the same exponential dependence applies to all gates. We demonstrate efficient calibration of crosstalk in a quadruple quantum dot array and define a set of virtual barrier gates, with which we show orthogonal control of all interdot tunnel couplings. Our method marks a key step forward in the scalability of the tuning process of large-scale quantum dot arrays.