CMOS SPAD based on photo-carrier diffusion achieving PDP >40% from 440 to 580 nm at 4 v excess bias
Journal Article
(2015)
Author(s)
C. Veerappan (TU Delft - Signal Processing Systems)
Edoardo Charbon-Iwasaki-Charbon (TU Delft - Signal Processing Systems)
Research Group
Signal Processing Systems
DOI related publication
https://doi.org/10.1109/LPT.2015.2468067
To reference this document use:
https://resolver.tudelft.nl/uuid:77e9f379-8b17-425b-ae17-b79fc304949f
More Info
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Publication Year
2015
Language
English
Research Group
Signal Processing Systems
Issue number
23
Volume number
27
Pages (from-to)
2445-2448
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