Atomically thin p-n junctions based on two-dimensional materials

Journal Article (2018)
Author(s)

Riccardo Frisenda (Instituto Madrilenõ de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia))

Aday J. Molina-Mendoza (Technische Universität Wien)

Thomas Mueller (Technische Universität Wien)

Andres Castellanos-Gomez (Materials Science Factory, Instituto de Ciencia de Materiales de Madrid (ICMM-CSIC))

Herre van der Zant (Kavli institute of nanoscience Delft, Instituto Madrilenõ de Estudios Avanzados en Nanociencia (IMDEA-Nanociencia), Universidad Autónoma de Madrid, TU Delft - QN/van der Zant Lab)

Research Group
QN/van der Zant Lab
Copyright
© 2018 Riccardo Frisenda, Aday J. Molina-Mendoza, Thomas Mueller, Andres Castellanos-Gomez, H.S.J. van der Zant
DOI related publication
https://doi.org/10.1039/C7CS00880E
More Info
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Publication Year
2018
Language
English
Copyright
© 2018 Riccardo Frisenda, Aday J. Molina-Mendoza, Thomas Mueller, Andres Castellanos-Gomez, H.S.J. van der Zant
Research Group
QN/van der Zant Lab
Volume number
47
Pages (from-to)
3339-3358
Reuse Rights

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Abstract

Recent research in two-dimensional (2D) materials has boosted a renovated interest in the p–n junction, one of the oldest electrical components which can be used in electronics and optoelectronics. 2D materials offer remarkable flexibility to design novel p–n junction device architectures, not possible with conventional bulk semiconductors. In this Review we thoroughly describe the different 2D p–n junction geometries studied so far, focusing on vertical (out-of-plane) and lateral (in-plane) 2D junctions and on mixed-dimensional junctions. We discuss the assembly methods developed to fabricate 2D p–n junctions making a distinction between top-down and bottom-up approaches. We also revise the literature studying the different applications of these atomically thin p–n junctions in electronic and optoelectronic devices. We discuss experiments on 2D p–n junctions used as current rectifiers, photodetectors, solar cells and light emitting devices. The important electronics and optoelectronics parameters of the discussed devices are listed in a table to facilitate their comparison. We conclude the Review with a critical discussion about the future outlook and challenges of this incipient research field.