CMOS-compatible metamaterial-based wideband mid-infrared absorber for microspectrometer applications

Conference Paper (2016)
Author(s)

Ehsan Karimi Shahmarvandi (TU Delft - Electronic Instrumentation)

Mohammadamir Ghaderi (TU Delft - Electronic Instrumentation)

N.P. Ayerden (TU Delft - Electronic Instrumentation)

G. de Graaf (TU Delft - Electronic Instrumentation)

RF Wolfenbuttel (TU Delft - Electronic Instrumentation)

Research Group
Electronic Instrumentation
DOI related publication
https://doi.org/10.1117/12.2227800
More Info
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Publication Year
2016
Language
English
Research Group
Electronic Instrumentation
Pages (from-to)
988309-1 - 988309-9

Abstract

The design of a metamaterial-based absorber for use in a MEMS-based mid-IR microspectrometer is reported. The microspectrometer consists of a LVOF that is aligned with an array of thermopile detectors, which is fabricated on a SiN membrane and coated with the absorber. Special emphasis is put on the CMOS compatible fabrication, which results in an absorber design based on Al disc resonators and an Al background plane that are separated by an SiO2 layer. Wideband operation over the 3-4 μm spectral range is achieved by staggered tuning of four Al disk resonators in one 1.5 x 1.5 μm2 unit cell, using four different values of the radius of the Al disk between 0.50 μm and 0.63 μm and an SiO2 layer thickness of 150 nm. Simulations reveal an average absorption of about 95% with a ±4% ripple at normal incidence, which reduces to about 80% absorption at a 20° incidence angle. The influence of material choice and dimensions on a single absorption peak was studied and the magnetic polariton was identified as the underlying mechanism of absorption. © (2016) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.

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