Growth and Optical Properties of Direct Band Gap Ge/Ge<sub>0.87</sub>Sn<sub>0.13</sub> Core/Shell Nanowire Arrays

Journal article (2017)

Authors

S Assali Eindhoven University of Technology
A. Dijkstra Eindhoven University of Technology
E.P.A.M. Bakkers Eindhoven University of Technology, QN/Bakkers Lab
A. Li Eindhoven University of Technology, QRD/Kouwenhoven Lab - QuTech Advanced Research Centre , Beijing University of Technology
Sebastian Koelling Eindhoven University of Technology
M. A. Verheijen Philips Innovation Labs, Eindhoven University of Technology
L Gagliano Eindhoven University of Technology
N. von den Driesch Forschungszentrum Jülich
D. Buca Forschungszentrum Jülich
P. M. Koenraad Eindhoven University of Technology
Jos E.M. Haverkort Eindhoven University of Technology
Research Group
QRD/Kouwenhoven Lab (QuTech Advanced Research Centre) (TU Delft)
Absorption Photoluminescence Germanium tin Semiconductor nanowire Direct band gap
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Published Date

2017

Language

English

Reuse Rights

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Faculty

QuTech Advanced Research Centre

Department

Qubit Research Division

Research Group

QRD/Kouwenhoven Lab

Abstract

Group IV semiconductor optoelectronic devices are now possible by using strain-free direct band gap GeSn alloys grown on a Ge/Si virtual substrate with Sn contents above 9%. Here, we demonstrate the growth of Ge/GeSn core/shell nanowire arrays with Sn incorporation up to 13% and without the formation of Sn clusters. The nanowire geometry promotes strain relaxation in the Ge0.87Sn0.13 shell and limits the formation of structural defects. This results in room-temperature photoluminescence centered at 0.465 eV and enhanced absorption above 98%. Therefore, direct band gap GeSn grown in a nanowire geometry holds promise as a low-cost and high-efficiency material for photodetectors operating in the short-wave infrared and thermal imaging devices.