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A. Dijkstra

Authored

8 records found

Group IV semiconductor optoelectronic devices are now possible by using strain-free direct band gap GeSn alloys grown on a Ge/Si virtual substrate with Sn contents above 9%. Here, we demonstrate the growth of Ge/GeSn core/shell nanowire arrays with Sn incorporation up to 13% and ...
Light emission from Si, would allow integration of electronic and optical functionality in the main electronics platform technology, but this has been impossible due to the indirect band gap of Si. In this talk I will discuss 2 different approaches, using unique properties of nan ...

Contributed

1 records found

[R]evolutionary technologies are rapidly making their way into the market, bringing with them greater precision, enhanced flexibility and — at least when compared to some conventional approaches — lower costs. The pace at which these new technologies, their tools and applications ...