Interfacial conduction in organic ferroelectric memory diodes
Hamed Sharifi Dehsari (Max Planck Institute for Polymer Research)
Manasvi Kumar (Max Planck Institute for Polymer Research)
Matteo Ghittorelli (Università di Brescia)
Gunnar Glasser (Max Planck Institute for Polymer Research)
Thomas Lenz (Max Planck Institute for Polymer Research)
Dago M. De Leeuw (TU Delft - Aerospace Engineering)
Fabrizio Torricelli (Università di Brescia)
Kamal Asadi (Max Planck Institute for Polymer Research)
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Abstract
Solution-processed memory diodes based on phase separated blends of ferroelectric and semiconducting polymers in the low resistance on-state operate similar to a vertical field-effect transistor at the pinch-off. Numerical simulations have shown that the performance of the diode is dominated by the conduction of charge carriers at the interface between the semiconductor and ferroelectric phases. Here, we present an unambiguous experimental demonstration of the charge injection process in the diodes. We employ a modified diode structure, wherein the electrode in contact with the semiconductor phase has been intentionally removed. Even in the absence of an electrical contact with the semiconductor phase, the diode still shows resistance switching. We provide numerical simulations that reproduce the experimentally measured I-V characteristics and therefore confirm interfacial conduction in the diodes. Furthermore, we discuss the implications of the proposed memory structure particularly in the performance of light-emitting diodes with built-in memory functionality, i.e., MEMOLEDs.