A homogeneous ferroelectric single crystal exhibits only two remanent polarization states that are stable over time, whereas intermediate, or unsaturated, polarization states are thermodynamically instable. Commonly used ferroelectric materials however, are inhomogeneous polycrystalline thin films or ceramics. To investigate the stability of intermediate polarization states, formed upon incomplete, or partial, switching, we have systematically studied their retention in capacitors comprising two classic ferroelectric materials, viz. random copolymer of vinylidene fluoride with trifluoroethylene, P(VDF-TrFE), and Pb(Zr,Ti)O3. Each experiment started from a discharged and electrically depolarized ferroelectric capacitor. Voltage pulses were applied to set the given polarization states. The retention was measured as a function of time at various temperatures. The intermediate polarization states are stable over time, up to the Curie temperature. We argue that the remarkable stability originates from the coexistence of effectively independent domains, with different values of polarization and coercive field. A domain growth model is derived quantitatively describing deterministic switching between the intermediate polarization states. We show that by using well-defined voltage pulses, the polarization can be set to any arbitrary value, allowing arithmetic programming. The feasibility of arithmetic programming along with the inherent stability of intermediate polarization states makes ferroelectric materials ideal candidates for multibit data storage. @en

Ferroelectric metal–organic frameworks are emerging as an exciting field of research and have witnessed great progress in the last decade. In this contribution, we briefly discuss ferroelectricity and its means of demonstration. Three mechanisms that lead to ferroelectricity are identified and critically discussed. On the basis of the shortcomings present in the literature, we present a protocol for the study of ferroelectricity in MOF compounds.@en

Re-establishment of electrical conductivity in graphene oxide (GO), the insulating form of graphene, is (partially) accomplished by reduction through high temperature treatments in a reducing atmosphere, or using strongly reducing chemicals or electrolytic processes. The reduction methods are suited for bulk graphene oxide. Spatially resolved reduction of thin films of graphene oxide is important for a wide range of applications such as in microelectronics, where an electrolyte-free, room temperature reduction process is needed. Here, we present spatially resolved solid-state reduction of graphene oxide thin films. We demonstrate that the reduction mechanism is based on electrolysis of water that is adsorbed on the graphene oxide thin film. The reduced graphene oxide thin-films show sheet resistance of only several kOhm, with weak temperature dependence. Graphene oxide can be produced on a large scale and processed using low-cost solution casting techniques. Spatially resolved re-establishment of conductivity in GO can be used in electrically controlled water permeation or in micro- and nanoelectronic applications for instance as an anti-fuse.@en

Non-volatile memories—providing the information storage functionality—are crucial circuit components. Solution-processed organic ferroelectric memory diodes are the non-volatile memory candidate for flexible electronics, as witnessed by the industrial demonstration of a 1 kbit reconfigurable memory fabricated on a plastic foil. Further progress, however, is limited owing to the lack of understanding of the device physics, which is required for the technological implementation of high-density arrays. Here we show that ferroelectric diodes operate as vertical field-effect transistors at the pinch-off. The tunnelling injection and charge accumulation are the fundamental mechanisms governing the device operation. Surprisingly, thermionic emission can be disregarded and the on-state current is not space charge limited. The proposed model explains and unifies a wide range of experiments, provides important design rules for the implementation of organic ferroelectric memory diodes and predicts an ultimate theoretical array density of up to 1012 bit cm 2. @en

It is still a great challenge to fabricate conjugated polymer monolayer field-effect transistors (PoM-FETs) due to intricate crystallization and film formation of conjugated polymers. Here we demonstrate PoM-FETs based on a single monolayer of a conjugated polymer. The resulting PoM-FETs are highly reproducible and exhibit charge carrier mobilities reaching 3 cm2 V-1 s-1. The high performance is attributed to the strong interactions of the polymer chains present already in solution leading to pronounced edge-on packing and well-defined microstructure in the monolayer. The high reproducibility enables the integration of discrete unipolar PoM-FETs into inverters and ring oscillators. Real logic functionality has been demonstrated by constructing a 15-bit code generator in which hundreds of self-assembled PoM-FETs are addressed simultaneously. Our results provide the state-of-the-art example of integrated circuits based on a conjugated polymer monolayer, opening prospective pathways for bottom-up organic electronics.@en

We demonstrate that ferroelectric memory diodes can be utilized as switching type positive temperature coefficient (PTC) thermistors. The diode consists of a phase separated blend of a ferroelectric and a semiconducting polymer stacked between two electrodes. The current through the semiconducting polymer depends on the ferroelectric polarization. At the Curie temperature the ferroelectric polymer depolarizes and consequently the current density through the semiconductor decreases by orders of magnitude. The diode therefore acts as switching type PTC thermistor. Unlike their inorganic counterparts, the PTC thermistors presented here are thin film devices. The switching temperature can be tuned by varying the Curie temperature of the ferroelectric polymer. @en

Solution-processed memory diodes based on phase separated blends of ferroelectric and semiconducting polymers in the low resistance on-state operate similar to a vertical field-effect transistor at the pinch-off. Numerical simulations have shown that the performance of the diode is dominated by the conduction of charge carriers at the interface between the semiconductor and ferroelectric phases. Here, we present an unambiguous experimental demonstration of the charge injection process in the diodes. We employ a modified diode structure, wherein the electrode in contact with the semiconductor phase has been intentionally removed. Even in the absence of an electrical contact with the semiconductor phase, the diode still shows resistance switching. We provide numerical simulations that reproduce the experimentally measured I-V characteristics and therefore confirm interfacial conduction in the diodes. Furthermore, we discuss the implications of the proposed memory structure particularly in the performance of light-emitting diodes with built-in memory functionality, i.e., MEMOLEDs.@en