Thin film thermistor with positive temperature coefficient of resistance based on phase separated blends of ferroelectric and semiconducting polymers
T. Lenz (Max Planck Institute for Polymer Research, Graduate School Materials Science)
H.S. Dehsari (Max Planck Institute for Polymer Research)
Kamal Asadi (Max Planck Institute for Polymer Research)
PWM Blom (Max Planck Institute for Polymer Research, Graduate School Materials Science)
W.A. Groen (TNO, Novel Aerospace Materials)
D. M. De Leeuw (Max Planck Institute for Polymer Research, Novel Aerospace Materials)
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Abstract
We demonstrate that ferroelectric memory diodes can be utilized as switching type positive temperature coefficient (PTC) thermistors. The diode consists of a phase separated blend of a ferroelectric and a semiconducting polymer stacked between two electrodes. The current through the semiconducting polymer depends on the ferroelectric polarization. At the Curie temperature the ferroelectric polymer depolarizes and consequently the current density through the semiconductor decreases by orders of magnitude. The diode therefore acts as switching type PTC thermistor. Unlike their inorganic counterparts, the PTC thermistors presented here are thin film devices. The switching temperature can be tuned by varying the Curie temperature of the ferroelectric polymer.