High-quality p+n Ge diodes selectively grown on Si with a sub-300nm transition region
Conference Paper
(2011)
Author(s)
A Sammak (TU Delft - Electronic Components, Technology and Materials)
Wiebe de Boer (TU Delft - Electronic Components, Technology and Materials, TU Delft - Old - EWI Sect. ECTM)
L Qi (TU Delft - Electronic Components, Technology and Materials)
Lis Nanver (TU Delft - Electronic Components, Technology and Materials)
Research Group
Electronic Components, Technology and Materials
DOI related publication
https://doi.org/10.1109/ESSDERC.2011.6044160
To reference this document use:
https://resolver.tudelft.nl/uuid:8538e28b-8871-4db9-9603-aed31e455734
More Info
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Publication Year
2011
Language
English
Research Group
Electronic Components, Technology and Materials
Pages (from-to)
359-362
ISBN (print)
978-1-4577-0707-0
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